X-ray Bragg Ptychography on a Single InGaN/GaN Core-Shell Nanowire

Dmitry Dzhigaev, Tomaš Stankevič, Zhaoxia Bi, Sergey Lazarev, Max Rose, Anatoly Shabalin, Juliane Reinhardt, Anders Mikkelsen, Lars Samuelson, Gerald Falkenberg, Robert Feidenhans'L, Ivan A. Vartanyants

Результат исследований: Материалы для журналаСтатья

14 Цитирования (Scopus)

Аннотация

The future of solid-state lighting can be potentially driven by applications of InGaN/GaN core-shell nanowires. These heterostructures provide the possibility for fine-tuning of functional properties by controlling a strain state between mismatched layers. We present a nondestructive study of a single 400 nm-thick InGaN/GaN core-shell nanowire using two-dimensional (2D) X-ray Bragg ptychography (XBP) with a nanofocused X-ray beam. The XBP reconstruction enabled the determination of a detailed three-dimensional (3D) distribution of the strain in the particular nanowire using a model based on finite element method. We observed the strain induced by the lattice mismatch between the GaN core and InGaN shell to be in the range from -0.1% to 0.15% for an In concentration of 30%. The maximum value of the strain component normal to the facets was concentrated at the transition region between the main part of the nanowire and the GaN tip. In addition, a variation in misfit strain relaxation between the axial growth and in-plane directions was revealed.

Язык оригиналаАнглийский
Страницы (с-по)6605-6611
Число страниц7
ЖурналACS Nano
Том11
Номер выпуска7
DOI
СостояниеОпубликовано - 25 июл 2017

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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