X-ray Bragg Ptychography on a Single InGaN/GaN Core-Shell Nanowire

Dmitry Dzhigaev, Tomaš Stankevič, Zhaoxia Bi, Sergey Lazarev, Max Rose, Anatoly Shabalin, Juliane Reinhardt, Anders Mikkelsen, Lars Samuelson, Gerald Falkenberg, Robert Feidenhans'L, Ivan A. Vartanyants

Результат исследований: Материалы для журналаСтатья

11 Цитирования (Scopus)

Выдержка

The future of solid-state lighting can be potentially driven by applications of InGaN/GaN core-shell nanowires. These heterostructures provide the possibility for fine-tuning of functional properties by controlling a strain state between mismatched layers. We present a nondestructive study of a single 400 nm-thick InGaN/GaN core-shell nanowire using two-dimensional (2D) X-ray Bragg ptychography (XBP) with a nanofocused X-ray beam. The XBP reconstruction enabled the determination of a detailed three-dimensional (3D) distribution of the strain in the particular nanowire using a model based on finite element method. We observed the strain induced by the lattice mismatch between the GaN core and InGaN shell to be in the range from -0.1% to 0.15% for an In concentration of 30%. The maximum value of the strain component normal to the facets was concentrated at the transition region between the main part of the nanowire and the GaN tip. In addition, a variation in misfit strain relaxation between the axial growth and in-plane directions was revealed.

Язык оригиналаАнглийский
Страницы (с-по)6605-6611
Число страниц7
ЖурналACS Nano
Том11
Номер выпуска7
DOI
СостояниеОпубликовано - 25 июл 2017

Отпечаток

Nanowires
nanowires
X rays
x rays
Strain relaxation
Lattice mismatch
illuminating
Heterojunctions
flat surfaces
finite element method
Tuning
Lighting
tuning
solid state
Finite element method

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Цитировать

Dzhigaev, D., Stankevič, T., Bi, Z., Lazarev, S., Rose, M., Shabalin, A., ... Vartanyants, I. A. (2017). X-ray Bragg Ptychography on a Single InGaN/GaN Core-Shell Nanowire. ACS Nano, 11(7), 6605-6611. https://doi.org/10.1021/acsnano.6b08122

X-ray Bragg Ptychography on a Single InGaN/GaN Core-Shell Nanowire. / Dzhigaev, Dmitry; Stankevič, Tomaš; Bi, Zhaoxia; Lazarev, Sergey; Rose, Max; Shabalin, Anatoly; Reinhardt, Juliane; Mikkelsen, Anders; Samuelson, Lars; Falkenberg, Gerald; Feidenhans'L, Robert; Vartanyants, Ivan A.

В: ACS Nano, Том 11, № 7, 25.07.2017, стр. 6605-6611.

Результат исследований: Материалы для журналаСтатья

Dzhigaev, D, Stankevič, T, Bi, Z, Lazarev, S, Rose, M, Shabalin, A, Reinhardt, J, Mikkelsen, A, Samuelson, L, Falkenberg, G, Feidenhans'L, R & Vartanyants, IA 2017, 'X-ray Bragg Ptychography on a Single InGaN/GaN Core-Shell Nanowire', ACS Nano, том. 11, № 7, стр. 6605-6611. https://doi.org/10.1021/acsnano.6b08122
Dzhigaev D, Stankevič T, Bi Z, Lazarev S, Rose M, Shabalin A и соавт. X-ray Bragg Ptychography on a Single InGaN/GaN Core-Shell Nanowire. ACS Nano. 2017 Июль 25;11(7):6605-6611. https://doi.org/10.1021/acsnano.6b08122
Dzhigaev, Dmitry ; Stankevič, Tomaš ; Bi, Zhaoxia ; Lazarev, Sergey ; Rose, Max ; Shabalin, Anatoly ; Reinhardt, Juliane ; Mikkelsen, Anders ; Samuelson, Lars ; Falkenberg, Gerald ; Feidenhans'L, Robert ; Vartanyants, Ivan A. / X-ray Bragg Ptychography on a Single InGaN/GaN Core-Shell Nanowire. В: ACS Nano. 2017 ; Том 11, № 7. стр. 6605-6611.
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abstract = "The future of solid-state lighting can be potentially driven by applications of InGaN/GaN core-shell nanowires. These heterostructures provide the possibility for fine-tuning of functional properties by controlling a strain state between mismatched layers. We present a nondestructive study of a single 400 nm-thick InGaN/GaN core-shell nanowire using two-dimensional (2D) X-ray Bragg ptychography (XBP) with a nanofocused X-ray beam. The XBP reconstruction enabled the determination of a detailed three-dimensional (3D) distribution of the strain in the particular nanowire using a model based on finite element method. We observed the strain induced by the lattice mismatch between the GaN core and InGaN shell to be in the range from -0.1{\%} to 0.15{\%} for an In concentration of 30{\%}. The maximum value of the strain component normal to the facets was concentrated at the transition region between the main part of the nanowire and the GaN tip. In addition, a variation in misfit strain relaxation between the axial growth and in-plane directions was revealed.",
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AU - Shabalin, Anatoly

AU - Reinhardt, Juliane

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