Turn-off analysis of the IGBT used in ZCS mode

S. Lefebvre, F. Forest, F. Calmon, J. P. Chante

Результат исследований: Материалы для типов конференцийДокумент

1 цитирование (Scopus)

Выдержка

This paper presents a study of the behaviour of PT and NPT IGBT in Zero Current Switching mode. Simulations allow to estimate the stored charge during turn-off cycle in this switching mode. We observe and we explain how to reduce turn-off losses by action on the gate drive, or by the choice of the device technology.

Язык оригиналаАнглийский
Страницы99-104
Число страниц6
СостояниеОпубликовано - 1 дек 1994
Опубликовано для внешнего пользованияДа
СобытиеProceedings of the 1994 6th IEEE International Symposium on Power Semiconductor Devices & ICs - Davos, Switz
Продолжительность: 31 мая 19942 июн 1994

Конференция

КонференцияProceedings of the 1994 6th IEEE International Symposium on Power Semiconductor Devices & ICs
ГородDavos, Switz
Период31.5.942.6.94

Отпечаток

Insulated gate bipolar transistors (IGBT)
Zero current switching

ASJC Scopus subject areas

  • Engineering(all)

Цитировать

Lefebvre, S., Forest, F., Calmon, F., & Chante, J. P. (1994). Turn-off analysis of the IGBT used in ZCS mode. 99-104. Документ представлен на Proceedings of the 1994 6th IEEE International Symposium on Power Semiconductor Devices & ICs, Davos, Switz, .

Turn-off analysis of the IGBT used in ZCS mode. / Lefebvre, S.; Forest, F.; Calmon, F.; Chante, J. P.

1994. 99-104 Документ представлен на Proceedings of the 1994 6th IEEE International Symposium on Power Semiconductor Devices & ICs, Davos, Switz, .

Результат исследований: Материалы для типов конференцийДокумент

Lefebvre, S, Forest, F, Calmon, F & Chante, JP 1994, 'Turn-off analysis of the IGBT used in ZCS mode' Документ представлен на, Davos, Switz, 31.5.94 - 2.6.94, стр. 99-104.
Lefebvre S, Forest F, Calmon F, Chante JP. Turn-off analysis of the IGBT used in ZCS mode. 1994. Документ представлен на Proceedings of the 1994 6th IEEE International Symposium on Power Semiconductor Devices & ICs, Davos, Switz, .
Lefebvre, S. ; Forest, F. ; Calmon, F. ; Chante, J. P. / Turn-off analysis of the IGBT used in ZCS mode. Документ представлен на Proceedings of the 1994 6th IEEE International Symposium on Power Semiconductor Devices & ICs, Davos, Switz, .6 стр.
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