Turn-off analysis of PT and NPT IGBTs in zero-current switching

S. Lefebvre, F. Forest, F. Costa, J. Arnould

Результат исследований: Материалы для журналаСтатья


The lower turn-off losses in zerocurrent switching (ZCS) converters as compared to the conventional hard switching mode using insulated gate bipolar transistors (IGBT), depends on the intrinsic bipolar junction transistor structure. Whichever the IGBT type may be, a significant part of the stored charge is removed from the base of the intrinsic bipolar junction transistor in ZCS because of the spontaneous current decrease, and because of the antiparallel diode turn-on. The turn-off loss reduction is especially significant when the carrier lifetime is low.

Язык оригиналаАнглийский
Страницы (с-по)185-191
Число страниц7
ЖурналIEE Proceedings: Circuits, Devices and Systems
Номер выпуска3
СостояниеОпубликовано - 1 янв 1998
Опубликовано для внешнего пользованияДа

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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