Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation

Результат исследований: Материалы для журналаСтатьярецензирование

Аннотация

Electrophysical and photoelectric properties of thin GaAs films deposited on polysilicon by pulse ion ablation using high-power ion beams have been investigated. The predominant charge carriers transfer mechanism in films and the type of dark and photoconductivity have been established. A vacuum annealing effect (10-2 Pa, 300-1000 K) on energetic and kinetic characteristics of dark and photoconductivity, the transfer mechanism and the type of charge carriers have been determined. The most probable causes of changes in the film electric and photoelectric characteristics have been discussed.

Язык оригиналаАнглийский
Номер статьи012003
ЖурналJournal of Physics: Conference Series
Том552
Номер выпуска1
DOI
СостояниеОпубликовано - 2014

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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