Total yield of channeling radiation from relativistic electrons in thin Si and W crystals

Sergey Vladimirovich Abdrashitov, O. V. Bogdanov, S. B. Dabagov, Y. L. Pivovarov, T. A. Tukhfatullin

Результат исследований: Материалы для журнала › Статья › рецензирование

Аннотация

Orientation dependences of channeling radiation total yield from relativistic 155-855 MeV electrons at both h100i axial and (100) planar channeling in thin silicon and tungsten crystals are studied by means of computer simulations. The model as well as computer code developed allows getting the quantitative results for orientation dependence of channeling radiation that can be used for crystal alignment in channeling experiments and/or for diagnostics of initial angular divergence of electron beam.

Язык оригинала	Английский
Страницы (с-по)	59-62
Число страниц	4
Журнал	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Том	309
DOI	https://doi.org/10.1016/j.nimb.2013.02.020
Состояние	Опубликовано - 1 янв 2013

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

Доступ к документу

10.1016/j.nimb.2013.02.020

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Total yield of channeling radiation from relativistic electrons in thin Si and W crystals. / Abdrashitov, Sergey Vladimirovich ; Bogdanov, O. V.; Dabagov, S. B.; Pivovarov, Y. L.; Tukhfatullin, T. A.

В: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Том 309, 01.01.2013, стр. 59-62.

Результат исследований: Материалы для журнала › Статья › рецензирование

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AU - Abdrashitov, Sergey Vladimirovich

AU - Bogdanov, O. V.

AU - Dabagov, S. B.

AU - Pivovarov, Y. L.

AU - Tukhfatullin, T. A.

PY - 2013/1/1

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N2 - Orientation dependences of channeling radiation total yield from relativistic 155-855 MeV electrons at both h100i axial and (100) planar channeling in thin silicon and tungsten crystals are studied by means of computer simulations. The model as well as computer code developed allows getting the quantitative results for orientation dependence of channeling radiation that can be used for crystal alignment in channeling experiments and/or for diagnostics of initial angular divergence of electron beam.

AB - Orientation dependences of channeling radiation total yield from relativistic 155-855 MeV electrons at both h100i axial and (100) planar channeling in thin silicon and tungsten crystals are studied by means of computer simulations. The model as well as computer code developed allows getting the quantitative results for orientation dependence of channeling radiation that can be used for crystal alignment in channeling experiments and/or for diagnostics of initial angular divergence of electron beam.

KW - Axial channeling

KW - Channeling radiation

KW - Planar channeling

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