Total yield of channeling radiation from relativistic electrons in thin Si and W crystals

Результат исследований: Материалы для журналаСтатья

6 Цитирования (Scopus)

Выдержка

Orientation dependences of channeling radiation total yield from relativistic 155-855 MeV electrons at both h100i axial and (100) planar channeling in thin silicon and tungsten crystals are studied by means of computer simulations. The model as well as computer code developed allows getting the quantitative results for orientation dependence of channeling radiation that can be used for crystal alignment in channeling experiments and/or for diagnostics of initial angular divergence of electron beam.

Язык оригиналаАнглийский
Страницы (с-по)59-62
Число страниц4
ЖурналNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Том309
DOI
СостояниеОпубликовано - 1 янв 2013

Отпечаток

Radiation
Crystals
Electrons
radiation
Crystal orientation
crystals
Tungsten
Electron beams
divergence
tungsten
electrons
computerized simulation
alignment
electron beams
computer programs
Silicon
Computer simulation
silicon
Experiments

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

Цитировать

Total yield of channeling radiation from relativistic electrons in thin Si and W crystals. / Abdrashitov, Sergey Vladimirovich; Bogdanov, O. V.; Dabagov, S. B.; Pivovarov, Y. L.; Tukhfatullin, T. A.

В: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Том 309, 01.01.2013, стр. 59-62.

Результат исследований: Материалы для журналаСтатья

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T1 - Total yield of channeling radiation from relativistic electrons in thin Si and W crystals

AU - Abdrashitov, Sergey Vladimirovich

AU - Bogdanov, O. V.

AU - Dabagov, S. B.

AU - Pivovarov, Y. L.

AU - Tukhfatullin, T. A.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - Orientation dependences of channeling radiation total yield from relativistic 155-855 MeV electrons at both h100i axial and (100) planar channeling in thin silicon and tungsten crystals are studied by means of computer simulations. The model as well as computer code developed allows getting the quantitative results for orientation dependence of channeling radiation that can be used for crystal alignment in channeling experiments and/or for diagnostics of initial angular divergence of electron beam.

AB - Orientation dependences of channeling radiation total yield from relativistic 155-855 MeV electrons at both h100i axial and (100) planar channeling in thin silicon and tungsten crystals are studied by means of computer simulations. The model as well as computer code developed allows getting the quantitative results for orientation dependence of channeling radiation that can be used for crystal alignment in channeling experiments and/or for diagnostics of initial angular divergence of electron beam.

KW - Axial channeling

KW - Channeling radiation

KW - Planar channeling

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