TY - JOUR
T1 - Three-dimensional reciprocal space mapping of diffuse scattering for the study of stacking faults in semipolar (112 2) GaN layers grown from the sidewall of an r-patterned sapphire substrate
AU - Lazarev, Sergey
AU - Bauer, Sondes
AU - Meisch, Tobias
AU - Bauer, Martin
AU - Tischer, Ingo
AU - Barchuk, Mykhailo
AU - Thonke, Klaus
AU - Holy, Vaclav
AU - Scholz, Ferdinand
AU - Baumbach, Tilo
PY - 2013/10
Y1 - 2013/10
N2 - Three-dimensional reciprocal space mapping of semipolar ( ) GaN grown on stripe-patterned r-plane ( ) sapphire substrates is found to be a powerful and crucial method for the analysis of diffuse scattering originating from stacking faults that are diffracting in a noncoplanar geometry. Additionally, by measuring three-dimensional reciprocal space maps (3D-RSMs) of several reflections, the transmission electron microscopy visibility criteria could be confirmed. Furthermore, similar to cathodoluminescence, the 3D-RSM method could be used in future as a reliable tool to distinguish clearly between the diffuse scattering signals coming from prismatic and from basal plane stacking faults and from partial dislocations in semipolar ( ) GaN. The fitting of the diffuse scattering intensity profile along the stacking fault streaks with a simulation based on the Monte Carlo approach has delivered an accurate determination of the basal plane stacking fault density. A reduction of the stacking fault density due to the intercalation of an SiN interlayer in the GaN layer deposited on the sidewall of the pre-patterned sapphire substrate has led to an improvement of the optoelectronic properties, influenced by the crystal quality, as has been demonstrated by a locally resolved cathodoluminescence investigation.
AB - Three-dimensional reciprocal space mapping of semipolar ( ) GaN grown on stripe-patterned r-plane ( ) sapphire substrates is found to be a powerful and crucial method for the analysis of diffuse scattering originating from stacking faults that are diffracting in a noncoplanar geometry. Additionally, by measuring three-dimensional reciprocal space maps (3D-RSMs) of several reflections, the transmission electron microscopy visibility criteria could be confirmed. Furthermore, similar to cathodoluminescence, the 3D-RSM method could be used in future as a reliable tool to distinguish clearly between the diffuse scattering signals coming from prismatic and from basal plane stacking faults and from partial dislocations in semipolar ( ) GaN. The fitting of the diffuse scattering intensity profile along the stacking fault streaks with a simulation based on the Monte Carlo approach has delivered an accurate determination of the basal plane stacking fault density. A reduction of the stacking fault density due to the intercalation of an SiN interlayer in the GaN layer deposited on the sidewall of the pre-patterned sapphire substrate has led to an improvement of the optoelectronic properties, influenced by the crystal quality, as has been demonstrated by a locally resolved cathodoluminescence investigation.
KW - diffuse scattering
KW - stacking faults
KW - three-dimensional reciprocal space mapping
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U2 - 10.1107/S0021889813020438
DO - 10.1107/S0021889813020438
M3 - Article
AN - SCOPUS:84884583764
VL - 46
SP - 1425
EP - 1433
JO - Journal of Applied Crystallography
JF - Journal of Applied Crystallography
SN - 0021-8898
IS - 5
ER -