Thin film preparation using focused high power ion beam

Vit M. Bystritskii, S. N. Volkov, A. V. Mytnikov, A. A. Sinebryukhov, D. J. Rej

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

1 Цитирования (Scopus)

Аннотация

The use of focused high power ion beam in thin film preparation is discussed. The ion beam was generated in focusing B-applied diode at GIMN accelerator. It consisted of approximately 70% protons and 30% carbon ions. The ion density in the focal plane reached 9 kA/cm2 that corresponds to 300 J/cm2. The thickness of the precipitated films made up to 100 nm per shot at the distance between target and substrate is 4 cm and the electrical resistance is at the level of 100 ohms. The ellypsometric data obtained with scanning electron microscope are also given. This method has high precision velocity, moderate vacuum conditions, and high melting temperature target usage.

Язык оригиналаАнглийский
Название основной публикацииDigest of Technical Papers-IEEE International Pulsed Power Conference
РедакторыW.L. Baker, G. Cooperstein
Место публикацииPiscataway, NJ, United States
ИздательIEEE
Страницы1221-1226
Число страниц6
Том2
СостояниеОпубликовано - 1995
СобытиеProceedings of the 1995 10th IEEE International Pulsed Power Conference. Part 1 (of 2) - Albuquerque, NM, USA
Продолжительность: 3 июл 19956 июл 1995

Другое

ДругоеProceedings of the 1995 10th IEEE International Pulsed Power Conference. Part 1 (of 2)
ГородAlbuquerque, NM, USA
Период3.7.956.7.95

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Цитировать

    Bystritskii, V. M., Volkov, S. N., Mytnikov, A. V., Sinebryukhov, A. A., & Rej, D. J. (1995). Thin film preparation using focused high power ion beam. В W. L. Baker, & G. Cooperstein (Ред.), Digest of Technical Papers-IEEE International Pulsed Power Conference (Том 2, стр. 1221-1226). IEEE.