Thermo-mechanical characterization of copper through-silicon vias (Cu-TSVs) using micro-Raman spectroscopy and atomic force microscopy

Parisa Bayat, Dietmar Vogel, Raul D. Rodriguez, Evgeniya Sheremet, Dietrich R.T. Zahn, Sven Rzepka, Bernd Michel

Результат исследований: Материалы для журналаСтатья

13 Цитирования (Scopus)

Выдержка

Thermo-mechanical reliability of through-silicon via (TSV) structures is affected by the residual stress, which is generated during thermal cycling in back end of line (BEOL) stack manufacturing, and by the 3D bonding processes. In this study, micro-Raman spectroscopy is employed for characterization of the local residual surface layer stress in Si due to the proximity of copper vias. We found that stress reduction in silicon in the vicinity of the TSVs is due to the relaxation after post-annealing. The residual thermal stress is relaxed more in the direction where the neighboring TSVs exist. Re-crystallization due to grain growth and also plastic and viscous behavior after annealing at high temperature might lead to higher stress relaxation that can impact on decreasing the keep-out zone (KOZ) size. Furthermore, the effect of post-annealing of Cu-TSVs in the generation of via protrusion is investigated. Cu protrusion mainly occurs due to the plastic and viscous behavior of Cu in the TSV. It was predicted from earlier publications, that the protrusion height is increasing with increasing the annealing temperature. However, we show that it might decrease at higher annealing temperatures of about 380 °C. This result can be associated with large modification of the copper grain growth and/or stress-induced grain sliding.

Язык оригиналаАнглийский
Страницы (с-по)101-104
Число страниц4
ЖурналMicroelectronic Engineering
Том137
Номер выпуска1
DOI
СостояниеОпубликовано - 1 янв 2015
Опубликовано для внешнего пользованияДа

Отпечаток

Silicon
Raman spectroscopy
Copper
Atomic force microscopy
atomic force microscopy
Annealing
copper
annealing
silicon
Grain growth
residual stress
Residual stresses
plastics
Plastics
stress relaxation
Thermal cycling
Stress relaxation
thermal stresses
Thermal stress
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Цитировать

Thermo-mechanical characterization of copper through-silicon vias (Cu-TSVs) using micro-Raman spectroscopy and atomic force microscopy. / Bayat, Parisa; Vogel, Dietmar; Rodriguez, Raul D.; Sheremet, Evgeniya; Zahn, Dietrich R.T.; Rzepka, Sven; Michel, Bernd.

В: Microelectronic Engineering, Том 137, № 1, 01.01.2015, стр. 101-104.

Результат исследований: Материалы для журналаСтатья

Bayat, Parisa ; Vogel, Dietmar ; Rodriguez, Raul D. ; Sheremet, Evgeniya ; Zahn, Dietrich R.T. ; Rzepka, Sven ; Michel, Bernd. / Thermo-mechanical characterization of copper through-silicon vias (Cu-TSVs) using micro-Raman spectroscopy and atomic force microscopy. В: Microelectronic Engineering. 2015 ; Том 137, № 1. стр. 101-104.
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AU - Zahn, Dietrich R.T.

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AU - Michel, Bernd

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