Thermal stability of alumina thin films containing γ-Al 2 O 3 phase prepared by reactive magnetron sputtering

J. Musil, J. Blažek, P. Zeman, Š Prokšová, M. Šašek, R. Čerstvý

Результат исследований: Материалы для журналаСтатьярецензирование

88 Цитирования (Scopus)

Аннотация

The paper reports on thermal stability of alumina thin films containing γ-Al 2 O 3 phase and its conversion to a thermodynamically stable α-Al 2 O 3 phase during a post-deposition equilibrium thermal annealing. The films were prepared by reactive magnetron sputtering and subsequently post-deposition annealing was carried out in air at temperatures ranging from 700 °C to 1150 °C and annealing times up to 5 h using a thermogravimetric system. The evolution of the structure was investigated by means of X-ray diffraction after cooling down of the films. It was found that (1) the nanocrystalline γ-Al 2 O 3 phase in the films is thermally stable up to 1000 °C even after 5 h of annealing, (2) the nanocrystalline θ-Al 2 O 3 phase was observed in a narrow time and temperature region at ≥1050 °C, and (3) annealing at 1100 °C for 2 h resulted in a dominance of the α-Al 2 O 3 phase only in the films with a sufficient thickness.

Язык оригиналаАнглийский
Страницы (с-по)1058-1062
Число страниц5
ЖурналApplied Surface Science
Том257
Номер выпуска3
DOI
СостояниеОпубликовано - 15 ноя 2010

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

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