TY - JOUR
T1 - Thermal stability of alumina thin films containing γ-Al 2 O 3 phase prepared by reactive magnetron sputtering
AU - Musil, J.
AU - Blažek, J.
AU - Zeman, P.
AU - Prokšová, Š
AU - Šašek, M.
AU - Čerstvý, R.
PY - 2010/11/15
Y1 - 2010/11/15
N2 - The paper reports on thermal stability of alumina thin films containing γ-Al 2 O 3 phase and its conversion to a thermodynamically stable α-Al 2 O 3 phase during a post-deposition equilibrium thermal annealing. The films were prepared by reactive magnetron sputtering and subsequently post-deposition annealing was carried out in air at temperatures ranging from 700 °C to 1150 °C and annealing times up to 5 h using a thermogravimetric system. The evolution of the structure was investigated by means of X-ray diffraction after cooling down of the films. It was found that (1) the nanocrystalline γ-Al 2 O 3 phase in the films is thermally stable up to 1000 °C even after 5 h of annealing, (2) the nanocrystalline θ-Al 2 O 3 phase was observed in a narrow time and temperature region at ≥1050 °C, and (3) annealing at 1100 °C for 2 h resulted in a dominance of the α-Al 2 O 3 phase only in the films with a sufficient thickness.
AB - The paper reports on thermal stability of alumina thin films containing γ-Al 2 O 3 phase and its conversion to a thermodynamically stable α-Al 2 O 3 phase during a post-deposition equilibrium thermal annealing. The films were prepared by reactive magnetron sputtering and subsequently post-deposition annealing was carried out in air at temperatures ranging from 700 °C to 1150 °C and annealing times up to 5 h using a thermogravimetric system. The evolution of the structure was investigated by means of X-ray diffraction after cooling down of the films. It was found that (1) the nanocrystalline γ-Al 2 O 3 phase in the films is thermally stable up to 1000 °C even after 5 h of annealing, (2) the nanocrystalline θ-Al 2 O 3 phase was observed in a narrow time and temperature region at ≥1050 °C, and (3) annealing at 1100 °C for 2 h resulted in a dominance of the α-Al 2 O 3 phase only in the films with a sufficient thickness.
KW - Annealing
KW - Nanocrystalline material
KW - Sputtering
KW - Thermal stability
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U2 - 10.1016/j.apsusc.2010.07.107
DO - 10.1016/j.apsusc.2010.07.107
M3 - Article
AN - SCOPUS:77956614024
VL - 257
SP - 1058
EP - 1062
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 3
ER -