Thermal measurement of losses of GaN power transistors for optimization of their drive

Lionel Hoffmann, Cyrille Gautier, Stephane Lefebvre, Francois Costa

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

2 Цитирования (Scopus)

Аннотация

In this paper, we present a thermal measurement method of the losses of eGaN-FET power transistor used in one phase leg. The dead-times are important to avoid short-circuit phase, but they can lead to a large part of the total losses because of reverse conduction. Thus, the drive must be optimized according to load current to keep losses at lowest lever.

Язык оригиналаАнглийский
Название основной публикации2013 15th European Conference on Power Electronics and Applications, EPE 2013
DOI
СостояниеОпубликовано - 17 дек 2013
Опубликовано для внешнего пользованияДа
Событие2013 15th European Conference on Power Electronics and Applications, EPE 2013 - Lille, Франция
Продолжительность: 2 сен 20136 сен 2013

Серия публикаций

Название2013 15th European Conference on Power Electronics and Applications, EPE 2013

Конференция

Конференция2013 15th European Conference on Power Electronics and Applications, EPE 2013
СтранаФранция
ГородLille
Период2.9.136.9.13

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Fuel Technology
  • Electrical and Electronic Engineering

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  • Цитировать

    Hoffmann, L., Gautier, C., Lefebvre, S., & Costa, F. (2013). Thermal measurement of losses of GaN power transistors for optimization of their drive. В 2013 15th European Conference on Power Electronics and Applications, EPE 2013 [6634623] (2013 15th European Conference on Power Electronics and Applications, EPE 2013). https://doi.org/10.1109/EPE.2013.6634623