An investigation was made of the kinetics of annealing of disordered regions created in GaAs by irradiation with 100 and 175 keV sulfur ions in doses of D//1 equals 2. 5 multiplied by 10**1**0 and D//2 equals 1 multiplied by 10**1**5 cm** minus **2. The kinetics of annealing of disordered regions occurred in two stages in the temperature range 300-378 K. In the first stage (T approximately equals 523 K, gamma equals 1) the annealing healed point defects, whereas during the second stage (T approximately equals 748 K, gamma equals 1), it affected defect complexes. When disordered regions overlapped, then 'reverse' annealing of the resistivity was observed during the first stage.
|Журнал||Soviet physics. Semiconductors|
|Состояние||Опубликовано - фев 1984|
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