The fast neutron irradiation influence on the AlGaAs IR-LEDs reliability

A. V. Gradoboev, K. N. Orlova, I. A. Asanov, A. V. Simonova

Результат исследований: Материалы для журналаСтатья

5 Цитирования (Scopus)

Выдержка

This paper represents the results of investigation of preliminary fast neutron irradiation influence on reliability of IR-LEDs manufactured on the basis of AlGaAs heterostructures. It is determined that design margin of LEDs is defined by catastrophic failures that are driven by mechanical destruction of LED packages rather than their lighting technology characteristics. The upper and lower limits of catastrophic failure probability are determined. In addition, the upper limit is shown to be dependent on the melt temperature of ohmic contact used to fix the chip to chip carrier. The preliminary fast neutron irradiation leads to the shift of defined temperature limits while the probability of catastrophic failure grows with neutron fluence that can be explained by lower radiation resistance of ohmic contact.

Язык оригиналаАнглийский
ЖурналMicroelectronics and Reliability
DOI
СостояниеПринято/в печати - 5 сен 2015

Отпечаток

Neutron irradiation
neutron irradiation
fast neutrons
Light emitting diodes
aluminum gallium arsenides
light emitting diodes
Ohmic contacts
electric contacts
chips
radiation tolerance
fixing
illuminating
destruction
Heterojunctions
margins
Neutrons
fluence
Lighting
Radiation
neutrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality

Цитировать

The fast neutron irradiation influence on the AlGaAs IR-LEDs reliability. / Gradoboev, A. V.; Orlova, K. N.; Asanov, I. A.; Simonova, A. V.

В: Microelectronics and Reliability, 05.09.2015.

Результат исследований: Материалы для журналаСтатья

@article{9c7444f8b58b4e2baf4eed5d5e6a8498,
title = "The fast neutron irradiation influence on the AlGaAs IR-LEDs reliability",
abstract = "This paper represents the results of investigation of preliminary fast neutron irradiation influence on reliability of IR-LEDs manufactured on the basis of AlGaAs heterostructures. It is determined that design margin of LEDs is defined by catastrophic failures that are driven by mechanical destruction of LED packages rather than their lighting technology characteristics. The upper and lower limits of catastrophic failure probability are determined. In addition, the upper limit is shown to be dependent on the melt temperature of ohmic contact used to fix the chip to chip carrier. The preliminary fast neutron irradiation leads to the shift of defined temperature limits while the probability of catastrophic failure grows with neutron fluence that can be explained by lower radiation resistance of ohmic contact.",
keywords = "AlGaAs, Fast neutrons, Heterostructures, IR range, Light emitting diodes, Package destruction, Reliability",
author = "Gradoboev, {A. V.} and Orlova, {K. N.} and Asanov, {I. A.} and Simonova, {A. V.}",
year = "2015",
month = "9",
day = "5",
doi = "10.1016/j.microrel.2016.07.143",
language = "English",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - The fast neutron irradiation influence on the AlGaAs IR-LEDs reliability

AU - Gradoboev, A. V.

AU - Orlova, K. N.

AU - Asanov, I. A.

AU - Simonova, A. V.

PY - 2015/9/5

Y1 - 2015/9/5

N2 - This paper represents the results of investigation of preliminary fast neutron irradiation influence on reliability of IR-LEDs manufactured on the basis of AlGaAs heterostructures. It is determined that design margin of LEDs is defined by catastrophic failures that are driven by mechanical destruction of LED packages rather than their lighting technology characteristics. The upper and lower limits of catastrophic failure probability are determined. In addition, the upper limit is shown to be dependent on the melt temperature of ohmic contact used to fix the chip to chip carrier. The preliminary fast neutron irradiation leads to the shift of defined temperature limits while the probability of catastrophic failure grows with neutron fluence that can be explained by lower radiation resistance of ohmic contact.

AB - This paper represents the results of investigation of preliminary fast neutron irradiation influence on reliability of IR-LEDs manufactured on the basis of AlGaAs heterostructures. It is determined that design margin of LEDs is defined by catastrophic failures that are driven by mechanical destruction of LED packages rather than their lighting technology characteristics. The upper and lower limits of catastrophic failure probability are determined. In addition, the upper limit is shown to be dependent on the melt temperature of ohmic contact used to fix the chip to chip carrier. The preliminary fast neutron irradiation leads to the shift of defined temperature limits while the probability of catastrophic failure grows with neutron fluence that can be explained by lower radiation resistance of ohmic contact.

KW - AlGaAs

KW - Fast neutrons

KW - Heterostructures

KW - IR range

KW - Light emitting diodes

KW - Package destruction

KW - Reliability

UR - http://www.scopus.com/inward/record.url?scp=84979781504&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84979781504&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2016.07.143

DO - 10.1016/j.microrel.2016.07.143

M3 - Article

AN - SCOPUS:84979781504

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

ER -