The effect of fast neutrons on the conductance of single-crystal silicon

V. A. Varlachev, E. S. Solodovnikov

Результат исследований: Материалы для журналаСтатья

Выдержка

The dependence of variation of the specific conductance of single-crystal silicon on the fast neutron fluence is calculated. The results of calculations are compared with the experimental data obtained in two channels of an IRT-T reactor with different neutron spectra. These experimental data are also discussed. The fast neutron fluence was controlled using threshold sulfur activation detectors. The specific electrical resistance was measured by a 4-probe method. The calculation data are in good agreement with experiment and show that the variation of the specific conductance due to exposure to fast neutrons is in direct proportion to the fluence of these neutrons. The proportionality coefficient depends on the neutron spectrum, but is independent of the initial specific conductance. In so doing, it makes no difference, whether silicon was previously irradiated or not.

Язык оригиналаАнглийский
Страницы (с-по)584-589
Число страниц6
ЖурналRussian Physics Journal
Том52
Номер выпуска6
DOI
СостояниеОпубликовано - ноя 2009

Отпечаток

fast neutrons
fluence
neutron spectra
single crystals
silicon
electrical resistance
proportion
sulfur
reactors
activation
neutrons
thresholds
detectors
coefficients

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Цитировать

The effect of fast neutrons on the conductance of single-crystal silicon. / Varlachev, V. A.; Solodovnikov, E. S.

В: Russian Physics Journal, Том 52, № 6, 11.2009, стр. 584-589.

Результат исследований: Материалы для журналаСтатья

Varlachev, V. A. ; Solodovnikov, E. S. / The effect of fast neutrons on the conductance of single-crystal silicon. В: Russian Physics Journal. 2009 ; Том 52, № 6. стр. 584-589.
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