The accumulation of radiation defects in gallium arsenide that has been subjected to pulsed and continuous ion implantation

M. V. Ardyshev, V. M. Ardyshev, Yu Yu Kryuchkov

Результат исследований: Материалы для журнала › Статья › рецензирование

Язык оригинала	Английский
Страницы (с-по)	313-315
Число страниц	3
Журнал	Fizika i Tekhnika Poluprovodnikov
Том	39
Номер выпуска	3
Состояние	Опубликовано - 2005

ASJC Scopus subject areas

В: Fizika i Tekhnika Poluprovodnikov, Том 39, № 3, 2005, стр. 313-315.

Результат исследований: Материалы для журнала › Статья › рецензирование

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AU - Kryuchkov, Yu Yu

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