Выдержка
Measurements of electrical conductivity and Rutherford backscattering are used to study the accumulation of defects in GaAs that has been subjected to pulsed (τp = 1.3 × 10(-2) s and an off-duty factor of 100) and continuous irradiation with 32S, 12C, and 4He ions at room temperature at the ion energies E = 100-150 keV, doses Φ = 1 × 109-6 × 10-6 cm(-2), and current densities j = 1 × 10(-9)-3 × 10(-6) A cm(-2). It is shown that the defect-accumulation rate during the pulsed implantation is much lower than it is during the continuous implantation.
| Язык оригинала | Английский |
|---|---|
| Страницы (с-по) | 293-295 |
| Число страниц | 3 |
| Журнал | Semiconductors |
| Том | 39 |
| Номер выпуска | 3 |
| DOI | |
| Состояние | Опубликовано - 1 янв 2005 |
Отпечаток
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Цитировать
The accumulation of radiation defects in callium arsenide that has been subjected to pulsed and continuous ion implantation. / Ardyshev, M. V.; Ardyshev, V. M.; Kryuchkov, Yu Yu.
В: Semiconductors, Том 39, № 3, 01.01.2005, стр. 293-295.Результат исследований: Материалы для журнала › Статья
}
TY - JOUR
T1 - The accumulation of radiation defects in callium arsenide that has been subjected to pulsed and continuous ion implantation
AU - Ardyshev, M. V.
AU - Ardyshev, V. M.
AU - Kryuchkov, Yu Yu
PY - 2005/1/1
Y1 - 2005/1/1
N2 - Measurements of electrical conductivity and Rutherford backscattering are used to study the accumulation of defects in GaAs that has been subjected to pulsed (τp = 1.3 × 10(-2) s and an off-duty factor of 100) and continuous irradiation with 32S, 12C, and 4He ions at room temperature at the ion energies E = 100-150 keV, doses Φ = 1 × 109-6 × 10-6 cm(-2), and current densities j = 1 × 10(-9)-3 × 10(-6) A cm(-2). It is shown that the defect-accumulation rate during the pulsed implantation is much lower than it is during the continuous implantation.
AB - Measurements of electrical conductivity and Rutherford backscattering are used to study the accumulation of defects in GaAs that has been subjected to pulsed (τp = 1.3 × 10(-2) s and an off-duty factor of 100) and continuous irradiation with 32S, 12C, and 4He ions at room temperature at the ion energies E = 100-150 keV, doses Φ = 1 × 109-6 × 10-6 cm(-2), and current densities j = 1 × 10(-9)-3 × 10(-6) A cm(-2). It is shown that the defect-accumulation rate during the pulsed implantation is much lower than it is during the continuous implantation.
UR - http://www.scopus.com/inward/record.url?scp=17644378056&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=17644378056&partnerID=8YFLogxK
U2 - 10.1134/1.1882789
DO - 10.1134/1.1882789
M3 - Article
AN - SCOPUS:17644378056
VL - 39
SP - 293
EP - 295
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 3
ER -