The accumulation of radiation defects in callium arsenide that has been subjected to pulsed and continuous ion implantation

Аннотация

Measurements of electrical conductivity and Rutherford backscattering are used to study the accumulation of defects in GaAs that has been subjected to pulsed (τp = 1.3 × 10(-2) s and an off-duty factor of 100) and continuous irradiation with ³²S, ¹²C, and ⁴He ions at room temperature at the ion energies E = 100-150 keV, doses Φ = 1 × 10⁹-6 × 10^-6 cm(-2), and current densities j = 1 × 10(-9)-3 × 10(-6) A cm(-2). It is shown that the defect-accumulation rate during the pulsed implantation is much lower than it is during the continuous implantation.

Язык оригинала	Английский
Страницы (с-по)	293-295
Число страниц	3
Журнал	Semiconductors
Том	39
Номер выпуска	3
DOI	https://doi.org/10.1134/1.1882789
Состояние	Опубликовано - 1 янв 2005

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Доступ к документу

10.1134/1.1882789

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Цитировать

Ardyshev, M. V., Ardyshev, V. M., & Kryuchkov, Y. Y. (2005). The accumulation of radiation defects in callium arsenide that has been subjected to pulsed and continuous ion implantation. Semiconductors, 39(3), 293-295. https://doi.org/10.1134/1.1882789

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abstract = "Measurements of electrical conductivity and Rutherford backscattering are used to study the accumulation of defects in GaAs that has been subjected to pulsed (τp = 1.3 × 10(-2) s and an off-duty factor of 100) and continuous irradiation with 32S, 12C, and 4He ions at room temperature at the ion energies E = 100-150 keV, doses Φ = 1 × 109-6 × 10-6 cm(-2), and current densities j = 1 × 10(-9)-3 × 10(-6) A cm(-2). It is shown that the defect-accumulation rate during the pulsed implantation is much lower than it is during the continuous implantation.",

author = "Ardyshev, {M. V.} and Ardyshev, {V. M.} and Kryuchkov, {Yu Yu}",

year = "2005",

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AU - Ardyshev, M. V.

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AU - Kryuchkov, Yu Yu

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N2 - Measurements of electrical conductivity and Rutherford backscattering are used to study the accumulation of defects in GaAs that has been subjected to pulsed (τp = 1.3 × 10(-2) s and an off-duty factor of 100) and continuous irradiation with 32S, 12C, and 4He ions at room temperature at the ion energies E = 100-150 keV, doses Φ = 1 × 109-6 × 10-6 cm(-2), and current densities j = 1 × 10(-9)-3 × 10(-6) A cm(-2). It is shown that the defect-accumulation rate during the pulsed implantation is much lower than it is during the continuous implantation.

AB - Measurements of electrical conductivity and Rutherford backscattering are used to study the accumulation of defects in GaAs that has been subjected to pulsed (τp = 1.3 × 10(-2) s and an off-duty factor of 100) and continuous irradiation with 32S, 12C, and 4He ions at room temperature at the ion energies E = 100-150 keV, doses Φ = 1 × 109-6 × 10-6 cm(-2), and current densities j = 1 × 10(-9)-3 × 10(-6) A cm(-2). It is shown that the defect-accumulation rate during the pulsed implantation is much lower than it is during the continuous implantation.

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