The accumulation of radiation defects in callium arsenide that has been subjected to pulsed and continuous ion implantation

M. V. Ardyshev, V. M. Ardyshev, Yu Yu Kryuchkov

Результат исследований: Материалы для журналаСтатья

Аннотация

Measurements of electrical conductivity and Rutherford backscattering are used to study the accumulation of defects in GaAs that has been subjected to pulsed (τp = 1.3 × 10(-2) s and an off-duty factor of 100) and continuous irradiation with 32S, 12C, and 4He ions at room temperature at the ion energies E = 100-150 keV, doses Φ = 1 × 109-6 × 10-6 cm(-2), and current densities j = 1 × 10(-9)-3 × 10(-6) A cm(-2). It is shown that the defect-accumulation rate during the pulsed implantation is much lower than it is during the continuous implantation.

Язык оригиналаАнглийский
Страницы (с-по)293-295
Число страниц3
ЖурналSemiconductors
Том39
Номер выпуска3
DOI
СостояниеОпубликовано - 1 янв 2005

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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