The ability to create NTD silicon technology in the IRT-T reactor in a horizontal experimental channel with one-side access

V. A. Varlachev, A. V. Golovatsky, E. G. Emets, Ya A. Butko

Результат исследований: Материалы для журналарецензирование

Аннотация

The article shows the ability of creation of neutron transmutation doping (NTD) of monocrystalline silicon technology in the reactor's channel, which has a one-side access. In the article a distribution of thermal neutron flux through the length of channel and it's radius, neutron spectrum were obtained which confirmed that horizontal experimental channel HEC-1 is suitable for NTD.

Язык оригиналаАнглийский
Номер статьи012047
ЖурналIOP Conference Series: Materials Science and Engineering
Том135
Номер выпуска1
DOI
СостояниеОпубликовано - 2 авг 2016
Событие8th International Scientific Conference on Issues of Physics and Technology in Science, Industry and Medicine - Tomsk, Российская Федерация
Продолжительность: 1 июн 20163 июн 2016

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

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