Temperature dependence of the dielectric strength of zinc sulfide films

A. A. Zhigal'skii, L. F. Ikonnikova, T. S. Minakova, V. A. Mukhachev, P. E. Troyan

Результат исследований: Материалы для журналаСтатья

5 Цитирования (Scopus)

Выдержка

The temperature dependence of the dielectric strength Epn of ZnS:Mn films produced by high-frequency magnetron sputtering was investigated in the range T = 20-200°C. It is shown that processes associated with removal of adsorbed water from the ZnS:Mn films are responsible for the maximum on the Epn = f(T) curve. Data on the temperature dependence of the capacitance and loss-angle tangent are given for thin-film systems based on ZnS:Mn.

Язык оригиналаАнглийский
Страницы (с-по)576-578
Число страниц3
ЖурналRussian Physics Journal
Том39
Номер выпуска6
СостояниеОпубликовано - 1996
Опубликовано для внешнего пользованияДа

Отпечаток

zinc sulfides
temperature dependence
tangents
magnetron sputtering
capacitance
curves
thin films
water

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Цитировать

Zhigal'skii, A. A., Ikonnikova, L. F., Minakova, T. S., Mukhachev, V. A., & Troyan, P. E. (1996). Temperature dependence of the dielectric strength of zinc sulfide films. Russian Physics Journal, 39(6), 576-578.

Temperature dependence of the dielectric strength of zinc sulfide films. / Zhigal'skii, A. A.; Ikonnikova, L. F.; Minakova, T. S.; Mukhachev, V. A.; Troyan, P. E.

В: Russian Physics Journal, Том 39, № 6, 1996, стр. 576-578.

Результат исследований: Материалы для журналаСтатья

Zhigal'skii, AA, Ikonnikova, LF, Minakova, TS, Mukhachev, VA & Troyan, PE 1996, 'Temperature dependence of the dielectric strength of zinc sulfide films', Russian Physics Journal, том. 39, № 6, стр. 576-578.
Zhigal'skii AA, Ikonnikova LF, Minakova TS, Mukhachev VA, Troyan PE. Temperature dependence of the dielectric strength of zinc sulfide films. Russian Physics Journal. 1996;39(6):576-578.
Zhigal'skii, A. A. ; Ikonnikova, L. F. ; Minakova, T. S. ; Mukhachev, V. A. ; Troyan, P. E. / Temperature dependence of the dielectric strength of zinc sulfide films. В: Russian Physics Journal. 1996 ; Том 39, № 6. стр. 576-578.
@article{0f5c4a025c604b71913cc594d159db34,
title = "Temperature dependence of the dielectric strength of zinc sulfide films",
abstract = "The temperature dependence of the dielectric strength Epn of ZnS:Mn films produced by high-frequency magnetron sputtering was investigated in the range T = 20-200°C. It is shown that processes associated with removal of adsorbed water from the ZnS:Mn films are responsible for the maximum on the Epn = f(T) curve. Data on the temperature dependence of the capacitance and loss-angle tangent are given for thin-film systems based on ZnS:Mn.",
author = "Zhigal'skii, {A. A.} and Ikonnikova, {L. F.} and Minakova, {T. S.} and Mukhachev, {V. A.} and Troyan, {P. E.}",
year = "1996",
language = "English",
volume = "39",
pages = "576--578",
journal = "Russian Physics Journal",
issn = "1064-8887",
publisher = "Consultants Bureau",
number = "6",

}

TY - JOUR

T1 - Temperature dependence of the dielectric strength of zinc sulfide films

AU - Zhigal'skii, A. A.

AU - Ikonnikova, L. F.

AU - Minakova, T. S.

AU - Mukhachev, V. A.

AU - Troyan, P. E.

PY - 1996

Y1 - 1996

N2 - The temperature dependence of the dielectric strength Epn of ZnS:Mn films produced by high-frequency magnetron sputtering was investigated in the range T = 20-200°C. It is shown that processes associated with removal of adsorbed water from the ZnS:Mn films are responsible for the maximum on the Epn = f(T) curve. Data on the temperature dependence of the capacitance and loss-angle tangent are given for thin-film systems based on ZnS:Mn.

AB - The temperature dependence of the dielectric strength Epn of ZnS:Mn films produced by high-frequency magnetron sputtering was investigated in the range T = 20-200°C. It is shown that processes associated with removal of adsorbed water from the ZnS:Mn films are responsible for the maximum on the Epn = f(T) curve. Data on the temperature dependence of the capacitance and loss-angle tangent are given for thin-film systems based on ZnS:Mn.

UR - http://www.scopus.com/inward/record.url?scp=53349107804&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=53349107804&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:53349107804

VL - 39

SP - 576

EP - 578

JO - Russian Physics Journal

JF - Russian Physics Journal

SN - 1064-8887

IS - 6

ER -