Temperature dependence of the dielectric strength of zinc sulfide films

A. A. Zhigal'skii, L. F. Ikonnikova, T. S. Minakova, V. A. Mukhachev, P. E. Troyan

Результат исследования: Материалы для журналаСтатья

5 Цитирования (Scopus)

Аннотация

The temperature dependence of the dielectric strength Epn of ZnS:Mn films produced by high-frequency magnetron sputtering was investigated in the range T = 20-200°C. It is shown that processes associated with removal of adsorbed water from the ZnS:Mn films are responsible for the maximum on the Epn = f(T) curve. Data on the temperature dependence of the capacitance and loss-angle tangent are given for thin-film systems based on ZnS:Mn.

Язык оригиналаАнглийский
Страницы (с... по...)576-578
Количество страниц3
ЖурналRussian Physics Journal
Том39
Номер выпуска6
Статус публикацииОпубликовано - 1996
Опубликовано для внешнего пользованияДа

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Цитировать

Zhigal'skii, A. A., Ikonnikova, L. F., Minakova, T. S., Mukhachev, V. A., & Troyan, P. E. (1996). Temperature dependence of the dielectric strength of zinc sulfide films. Russian Physics Journal, 39(6), 576-578.