Temperature dependence of accumulation of radiation defects in ionic crystals

Результат исследований: Материалы для журналаСтатья

Выдержка

The processes responsible for the temperature dependence of the accumulation of radiation defects are analyzed. An analytic expression is obtained for the temperature dependence of defect accumulation in a wide temperature range.

Язык оригиналаАнглийский
Страницы (с-по)181-184
Число страниц4
ЖурналSoviet Physics Journal
Том22
Номер выпуска2
DOI
СостояниеОпубликовано - фев 1979

Отпечаток

ionic crystals
temperature dependence
defects
radiation
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Цитировать

Temperature dependence of accumulation of radiation defects in ionic crystals. / Lisitsyn, V. M.

В: Soviet Physics Journal, Том 22, № 2, 02.1979, стр. 181-184.

Результат исследований: Материалы для журналаСтатья

@article{fa50aea514a0489491b91e086f2d00a1,
title = "Temperature dependence of accumulation of radiation defects in ionic crystals",
abstract = "The processes responsible for the temperature dependence of the accumulation of radiation defects are analyzed. An analytic expression is obtained for the temperature dependence of defect accumulation in a wide temperature range.",
author = "Lisitsyn, {V. M.}",
year = "1979",
month = "2",
doi = "10.1007/BF00892014",
language = "English",
volume = "22",
pages = "181--184",
journal = "Russian Physics Journal",
issn = "1064-8887",
publisher = "Consultants Bureau",
number = "2",

}

TY - JOUR

T1 - Temperature dependence of accumulation of radiation defects in ionic crystals

AU - Lisitsyn, V. M.

PY - 1979/2

Y1 - 1979/2

N2 - The processes responsible for the temperature dependence of the accumulation of radiation defects are analyzed. An analytic expression is obtained for the temperature dependence of defect accumulation in a wide temperature range.

AB - The processes responsible for the temperature dependence of the accumulation of radiation defects are analyzed. An analytic expression is obtained for the temperature dependence of defect accumulation in a wide temperature range.

UR - http://www.scopus.com/inward/record.url?scp=34250256772&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34250256772&partnerID=8YFLogxK

U2 - 10.1007/BF00892014

DO - 10.1007/BF00892014

M3 - Article

AN - SCOPUS:34250256772

VL - 22

SP - 181

EP - 184

JO - Russian Physics Journal

JF - Russian Physics Journal

SN - 1064-8887

IS - 2

ER -