Temperature dependence of accumulation of radiation defects in ionic crystals

Отделение материаловедения

Результат исследований: Материалы для журнала › Статья

Аннотация

The processes responsible for the temperature dependence of the accumulation of radiation defects are analyzed. An analytic expression is obtained for the temperature dependence of defect accumulation in a wide temperature range.

Язык оригинала	Английский
Страницы (с-по)	181-184
Число страниц	4
Журнал	Soviet Physics Journal
Том	22
Номер выпуска	2
DOI	https://doi.org/10.1007/BF00892014
Состояние	Опубликовано - фев 1979

ASJC Scopus subject areas

Physics and Astronomy(all)

Доступ к документу

10.1007/BF00892014

Fingerprint Подробные сведения о темах исследования «Temperature dependence of accumulation of radiation defects in ionic crystals». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать

Lisitsyn, V. M. (1979). Temperature dependence of accumulation of radiation defects in ionic crystals. Soviet Physics Journal, 22(2), 181-184. https://doi.org/10.1007/BF00892014

@article{fa50aea514a0489491b91e086f2d00a1,

title = "Temperature dependence of accumulation of radiation defects in ionic crystals",

abstract = "The processes responsible for the temperature dependence of the accumulation of radiation defects are analyzed. An analytic expression is obtained for the temperature dependence of defect accumulation in a wide temperature range.",

author = "Lisitsyn, {V. M.}",

year = "1979",

month = feb,

doi = "10.1007/BF00892014",

language = "English",

volume = "22",

pages = "181--184",

journal = "Russian Physics Journal",

issn = "1064-8887",

publisher = "Consultants Bureau",

number = "2",

}

TY - JOUR

T1 - Temperature dependence of accumulation of radiation defects in ionic crystals

AU - Lisitsyn, V. M.

PY - 1979/2

Y1 - 1979/2

N2 - The processes responsible for the temperature dependence of the accumulation of radiation defects are analyzed. An analytic expression is obtained for the temperature dependence of defect accumulation in a wide temperature range.

AB - The processes responsible for the temperature dependence of the accumulation of radiation defects are analyzed. An analytic expression is obtained for the temperature dependence of defect accumulation in a wide temperature range.

UR - http://www.scopus.com/inward/record.url?scp=34250256772&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34250256772&partnerID=8YFLogxK

U2 - 10.1007/BF00892014

DO - 10.1007/BF00892014

M3 - Article

AN - SCOPUS:34250256772

VL - 22

SP - 181

EP - 184

JO - Russian Physics Journal

JF - Russian Physics Journal

SN - 1064-8887

IS - 2

ER -