Temperature dependence of accumulation of radiation defects in ionic crystals

Отделение материаловедения

Результат исследований: Материалы для журнала › Статья › рецензирование

Аннотация

The processes responsible for the temperature dependence of the accumulation of radiation defects are analyzed. An analytic expression is obtained for the temperature dependence of defect accumulation in a wide temperature range.

Язык оригинала	Английский
Страницы (с-по)	181-184
Число страниц	4
Журнал	Soviet Physics Journal
Том	22
Номер выпуска	2
DOI	https://doi.org/10.1007/BF00892014
Состояние	Опубликовано - фев 1979

ASJC Scopus subject areas

Physics and Astronomy(all)

Доступ к документу

10.1007/BF00892014

Fingerprint Подробные сведения о темах исследования «Temperature dependence of accumulation of radiation defects in ionic crystals». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать

@article{fa50aea514a0489491b91e086f2d00a1,

title = "Temperature dependence of accumulation of radiation defects in ionic crystals",

abstract = "The processes responsible for the temperature dependence of the accumulation of radiation defects are analyzed. An analytic expression is obtained for the temperature dependence of defect accumulation in a wide temperature range.",

author = "Lisitsyn, {V. M.}",

year = "1979",

month = feb,

doi = "10.1007/BF00892014",

language = "English",

volume = "22",

pages = "181--184",

journal = "Russian Physics Journal",

issn = "1064-8887",

publisher = "Consultants Bureau",

number = "2",

}

TY - JOUR

T1 - Temperature dependence of accumulation of radiation defects in ionic crystals

AU - Lisitsyn, V. M.

PY - 1979/2

Y1 - 1979/2

N2 - The processes responsible for the temperature dependence of the accumulation of radiation defects are analyzed. An analytic expression is obtained for the temperature dependence of defect accumulation in a wide temperature range.

AB - The processes responsible for the temperature dependence of the accumulation of radiation defects are analyzed. An analytic expression is obtained for the temperature dependence of defect accumulation in a wide temperature range.

UR - http://www.scopus.com/inward/record.url?scp=34250256772&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34250256772&partnerID=8YFLogxK

U2 - 10.1007/BF00892014

DO - 10.1007/BF00892014

M3 - Article

AN - SCOPUS:34250256772

VL - 22

SP - 181

EP - 184

JO - Russian Physics Journal

JF - Russian Physics Journal

SN - 1064-8887

IS - 2

ER -