Выдержка
The processes responsible for the temperature dependence of the accumulation of radiation defects are analyzed. An analytic expression is obtained for the temperature dependence of defect accumulation in a wide temperature range.
| Язык оригинала | Английский |
|---|---|
| Страницы (с-по) | 181-184 |
| Число страниц | 4 |
| Журнал | Soviet Physics Journal |
| Том | 22 |
| Номер выпуска | 2 |
| DOI | |
| Состояние | Опубликовано - фев 1979 |
Отпечаток
ASJC Scopus subject areas
- Physics and Astronomy(all)
Цитировать
Temperature dependence of accumulation of radiation defects in ionic crystals. / Lisitsyn, V. M.
В: Soviet Physics Journal, Том 22, № 2, 02.1979, стр. 181-184.Результат исследований: Материалы для журнала › Статья
}
TY - JOUR
T1 - Temperature dependence of accumulation of radiation defects in ionic crystals
AU - Lisitsyn, V. M.
PY - 1979/2
Y1 - 1979/2
N2 - The processes responsible for the temperature dependence of the accumulation of radiation defects are analyzed. An analytic expression is obtained for the temperature dependence of defect accumulation in a wide temperature range.
AB - The processes responsible for the temperature dependence of the accumulation of radiation defects are analyzed. An analytic expression is obtained for the temperature dependence of defect accumulation in a wide temperature range.
UR - http://www.scopus.com/inward/record.url?scp=34250256772&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34250256772&partnerID=8YFLogxK
U2 - 10.1007/BF00892014
DO - 10.1007/BF00892014
M3 - Article
AN - SCOPUS:34250256772
VL - 22
SP - 181
EP - 184
JO - Russian Physics Journal
JF - Russian Physics Journal
SN - 1064-8887
IS - 2
ER -