Synthesis of nanosized silicon carbide in a free expiring plasma jet

Результат исследования: Материалы для книги/типы отчетовМатериалы для конференции

Аннотация

Silicon carbide (SiC) nanomaterials can be successfully used for ceramics production and semiconductor applications. The possibility of the SiC nanopowder synthesis in an electrodischarge silicon-carbon plasma jet generated by a pulsed coaxial magnetoplasma accelerator (CMPA) is shown in this paper. A plasma jet expired in a free space of a reactor chamber filled with argon. The synthesized product was analyzed without any preparation by some modern techniques such as X-ray diffraction, scanning and transmission electron microscopy. The resulting product was compared with nanopowders synthesized in a plasma flow influencing on a copper barrier.

Язык оригиналаАнглийский
Заголовок главной публикации2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings
ИздательInstitute of Electrical and Electronics Engineers Inc.
ISBN (печатная версия)9781479971022
DOI
Статус публикацииОпубликовано - 1 июл 2015
Событие2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Omsk, Российская Федерация
Длительность: 21 мая 201523 мая 2015

Другое

Другое2015 International Siberian Conference on Control and Communications, SIBCON 2015
СтранаРоссийская Федерация
ГородOmsk
Период21.5.1523.5.15

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ASJC Scopus subject areas

  • Computer Networks and Communications
  • Control and Systems Engineering

Цитировать

Nikitin, D. S., Sivkov, A., Pak, A., Shanenkova, Y., & Ivashutenko, A. (2015). Synthesis of nanosized silicon carbide in a free expiring plasma jet. В 2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings [7147160] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SIBCON.2015.7147160