Synthesis of nanosized silicon carbide in a free expiring plasma jet

Dmitry Sergeevich Nikitin, A. Sivkov, A. Pak, Yu Shanenkova, A. Ivashutenko

Результат исследования: Материалы для книги/типы отчетов › Материалы для конференции

Аннотация

Silicon carbide (SiC) nanomaterials can be successfully used for ceramics production and semiconductor applications. The possibility of the SiC nanopowder synthesis in an electrodischarge silicon-carbon plasma jet generated by a pulsed coaxial magnetoplasma accelerator (CMPA) is shown in this paper. A plasma jet expired in a free space of a reactor chamber filled with argon. The synthesized product was analyzed without any preparation by some modern techniques such as X-ray diffraction, scanning and transmission electron microscopy. The resulting product was compared with nanopowders synthesized in a plasma flow influencing on a copper barrier.

Язык оригинала	Английский
Заголовок главной публикации	2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings
Издатель	Institute of Electrical and Electronics Engineers Inc.
ISBN (печатная версия)	9781479971022
DOI	https://doi.org/10.1109/SIBCON.2015.7147160
Статус публикации	Опубликовано - 1 июл 2015
Событие	2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Omsk, Российская Федерация Длительность: 21 мая 2015 → 23 мая 2015

Другое

Другое	2015 International Siberian Conference on Control and Communications, SIBCON 2015
Страна	Российская Федерация
Город	Omsk
Период	21.5.15 → 23.5.15

Fingerprint

ASJC Scopus subject areas

Computer Networks and Communications
Control and Systems Engineering

Цитировать

Nikitin, D. S., Sivkov, A., Pak, A., Shanenkova, Y., & Ivashutenko, A. (2015). Synthesis of nanosized silicon carbide in a free expiring plasma jet. В 2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings [7147160] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SIBCON.2015.7147160

Synthesis of nanosized silicon carbide in a free expiring plasma jet. / Nikitin, Dmitry Sergeevich ; Sivkov, A.; Pak, A.; Shanenkova, Yu ; Ivashutenko, A.

2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2015. 7147160.

Результат исследования: Материалы для книги/типы отчетов › Материалы для конференции

Nikitin, DS , Sivkov, A , Pak, A , Shanenkova, Y & Ivashutenko, A 2015, Synthesis of nanosized silicon carbide in a free expiring plasma jet. в 2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings., 7147160, Institute of Electrical and Electronics Engineers Inc., 2015 International Siberian Conference on Control and Communications, SIBCON 2015, Omsk, Российская Федерация, 21.5.15. https://doi.org/10.1109/SIBCON.2015.7147160

@inproceedings{1500e10103334a67b0e0149b9ca0fa11,

title = "Synthesis of nanosized silicon carbide in a free expiring plasma jet",

abstract = "Silicon carbide (SiC) nanomaterials can be successfully used for ceramics production and semiconductor applications. The possibility of the SiC nanopowder synthesis in an electrodischarge silicon-carbon plasma jet generated by a pulsed coaxial magnetoplasma accelerator (CMPA) is shown in this paper. A plasma jet expired in a free space of a reactor chamber filled with argon. The synthesized product was analyzed without any preparation by some modern techniques such as X-ray diffraction, scanning and transmission electron microscopy. The resulting product was compared with nanopowders synthesized in a plasma flow influencing on a copper barrier.",

keywords = "coaxial magnetoplasma accelerator, plasmodynamic synthesis, silicon carbide, transmission electron microscopy, X-ray diffractometry",

author = "Nikitin, {Dmitry Sergeevich} and A. Sivkov and A. Pak and Yu Shanenkova and A. Ivashutenko",

year = "2015",

month = "7",

day = "1",

doi = "10.1109/SIBCON.2015.7147160",

language = "English",

isbn = "9781479971022",

booktitle = "2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2015 International Siberian Conference on Control and Communications, SIBCON 2015 ; Conference date: 21-05-2015 Through 23-05-2015",

}

TY - GEN

T1 - Synthesis of nanosized silicon carbide in a free expiring plasma jet

AU - Nikitin, Dmitry Sergeevich

AU - Sivkov, A.

AU - Pak, A.

AU - Shanenkova, Yu

AU - Ivashutenko, A.

PY - 2015/7/1

Y1 - 2015/7/1

N2 - Silicon carbide (SiC) nanomaterials can be successfully used for ceramics production and semiconductor applications. The possibility of the SiC nanopowder synthesis in an electrodischarge silicon-carbon plasma jet generated by a pulsed coaxial magnetoplasma accelerator (CMPA) is shown in this paper. A plasma jet expired in a free space of a reactor chamber filled with argon. The synthesized product was analyzed without any preparation by some modern techniques such as X-ray diffraction, scanning and transmission electron microscopy. The resulting product was compared with nanopowders synthesized in a plasma flow influencing on a copper barrier.

AB - Silicon carbide (SiC) nanomaterials can be successfully used for ceramics production and semiconductor applications. The possibility of the SiC nanopowder synthesis in an electrodischarge silicon-carbon plasma jet generated by a pulsed coaxial magnetoplasma accelerator (CMPA) is shown in this paper. A plasma jet expired in a free space of a reactor chamber filled with argon. The synthesized product was analyzed without any preparation by some modern techniques such as X-ray diffraction, scanning and transmission electron microscopy. The resulting product was compared with nanopowders synthesized in a plasma flow influencing on a copper barrier.

KW - coaxial magnetoplasma accelerator

KW - plasmodynamic synthesis

KW - silicon carbide

KW - transmission electron microscopy

KW - X-ray diffractometry

UR - http://www.scopus.com/inward/record.url?scp=84941060649&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84941060649&partnerID=8YFLogxK

U2 - 10.1109/SIBCON.2015.7147160

DO - 10.1109/SIBCON.2015.7147160

M3 - Conference contribution

AN - SCOPUS:84941060649

SN - 9781479971022

BT - 2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2015 International Siberian Conference on Control and Communications, SIBCON 2015

Y2 - 21 May 2015 through 23 May 2015

ER -

Доступ к документу

10.1109/SIBCON.2015.7147160