Synthesis and properties of films in the SiO2-Bi2O3 system

L. P. Borilo, A. G. Mal'Chik, S. A. Kuznetsova, V. V. Kozik, A. V. Zabolotskaya

    Результат исследований: Материалы для журналаСтатья

    4 Цитирования (Scopus)

    Аннотация

    The compositions of film-forming solutions for synthesizing films in the SiO2-Bi2O3 system were determined (10-90 mol % Bi2O3). The obtained films are characterized by high dielectric constants (2.43-7.89). It was demonstrated how the quantitative ratio between SiO2 and Bi2O3 in the films and powders affects their phase composition, refractive index, and dielectric constant and the acid-base properties of the surface.

    Язык оригиналаАнглийский
    Страницы (с-по)1065-1068
    Число страниц4
    ЖурналRussian Journal of Inorganic Chemistry
    Том59
    Номер выпуска10
    DOI
    СостояниеОпубликовано - 2014

    ASJC Scopus subject areas

    • Inorganic Chemistry

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  • Цитировать

    Borilo, L. P., Mal'Chik, A. G., Kuznetsova, S. A., Kozik, V. V., & Zabolotskaya, A. V. (2014). Synthesis and properties of films in the SiO2-Bi2O3 system. Russian Journal of Inorganic Chemistry, 59(10), 1065-1068. https://doi.org/10.1134/S0036023614100039