Study on aluminum reconstruction and bond wire lift-off effects on current distribution in power semiconductor dies

T. A. Nguyen, S. Lefebvre, P. Y. Joubert, D. Labrousse, S. Bontemps

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

Аннотация

The ageing of the top level of power dies (aluminum reconstruction and bond wire lift-off) which is due to power cycling of power semiconductor modules results in the redistribution of the current lines in the metallization layer but also in the elementary cells of the power dies (MOSFET or IGBT) with a critical risk of failure when local current density or local temperature reach a critical value. The paper reports on the estimation of the distribution of DC currents flowing in the metallization layer in correlation to the local degradation of the aluminum sheet resistance and to the bond wire lift-off. The local distribution of the current in the metallization layer is obtained from a map of the potential of the source metallization. Results help to understand physical origin of failures after ageing of the top level of power semiconductor dies.

Язык оригиналаАнглийский
Название основной публикацииProceedings - PCIM Europe 2013
Подзаголовок основной публикацииInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
ИздательMesago PCIM GmbH
Страницы583-590
Число страниц8
ISBN (печатное издание)9783800735051
СостояниеОпубликовано - 1 янв 2013
Опубликовано для внешнего пользованияДа
СобытиеInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2013 - Nuremberg, Германия
Продолжительность: 14 мая 201316 мая 2013

Серия публикаций

НазваниеPCIM Europe Conference Proceedings
ISSN (электронное издание)2191-3358

Конференция

КонференцияInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2013
СтранаГермания
ГородNuremberg
Период14.5.1316.5.13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Цитировать

    Nguyen, T. A., Lefebvre, S., Joubert, P. Y., Labrousse, D., & Bontemps, S. (2013). Study on aluminum reconstruction and bond wire lift-off effects on current distribution in power semiconductor dies. В Proceedings - PCIM Europe 2013: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (стр. 583-590). (PCIM Europe Conference Proceedings). Mesago PCIM GmbH.