Study of the memory effect in 3-cm band gunn diodes under irradiation by fast neutrons

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

1 Цитирования (Scopus)

Аннотация

Irradiation by fast neutrons provokes parameters degradation of semiconductor devices. On the other hand, operating conditions of the devices may lead to partial (or complete) annealing of defects introduced by ionizing radiation. The main aim - investigation of the memory effect in the Gunn diodes of the 3-cm wavelength range was carried out on the basis of n+-n-n++ GaAs structures under irradiation by fast neutrons. As a result of researches the existence of memory effect is established, the appearance of which leads to an increase radiation resistance under subsequent irradiation. The possible mechanisms of memory effect are considered.

Язык оригиналаАнглийский
Название основной публикацииCriMiCo 2014 - 2014 24th International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings
ИздательInstitute of Electrical and Electronics Engineers Inc.
Страницы870-871
Число страниц2
ISBN (печатное издание)9789663354163
DOI
СостояниеОпубликовано - 14 ноя 2014
Событие2014 24th International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2014 - Sevastopol, Crimea, Украина
Продолжительность: 7 сен 201413 сен 2014

Другое

Другое2014 24th International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2014
СтранаУкраина
ГородSevastopol, Crimea
Период7.9.1413.9.14

ASJC Scopus subject areas

  • Computer Networks and Communications

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