The effect of intensity inversion in the patterns of angular distribution of the electrons with energies up to 2. 5 MeV scattered along the low-index directions of a thin silicon crystal is studied. This phenomena is observed when the angle of beam incidence relative to a low-index axis of the crystal is large compared with the critical angle of channeling. The discussion is given in the scope of a model based upon bound states of channeled electrons, as a result of excitation of secondary bound states of electrons with atomic rows and planes.
|Журнал||Physica Status Solidi (B) Basic Research|
|Состояние||Опубликовано - сен 1980|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics