STUDY OF THE ″BLOCKING EFFECT″ FOR FAST ELECTRONS IN A SILICON CRYSTAL.

D. E. Popov, S. V. Plotnikov, V. V. Kaplin, S. A. Vorobiev

Результат исследований: Материалы для журналаСтатья

2 Цитирования (Scopus)

Аннотация

The effect of intensity inversion in the patterns of angular distribution of the electrons with energies up to 2. 5 MeV scattered along the low-index directions of a thin silicon crystal is studied. This phenomena is observed when the angle of beam incidence relative to a low-index axis of the crystal is large compared with the critical angle of channeling. The discussion is given in the scope of a model based upon bound states of channeled electrons, as a result of excitation of secondary bound states of electrons with atomic rows and planes.

Язык оригиналаАнглийский
Страницы (с-по)395-402
Число страниц8
ЖурналPhysica Status Solidi (B) Basic Research
Том101
Номер выпуска1
СостояниеОпубликовано - сен 1980

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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