Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique

T. A. Nguyen, P. Y. Joubert, S. Lefebvre, G. Chaplier, L. Rousseau

Результат исследований: Материалы для журналаСтатья

13 Цитирования (Scopus)

Выдержка

The ageing of the metallization layers of power semiconductor dies may be the cause of failure of power semiconductor modules. Usual indicators of failure like on-state voltage drops make it difficult to highlight the deterioration of the metallization layer. In this study, we evaluate the relevance of the characterization of power device metallizations by means of the eddy current sensors. Experimental results show the ability to monitor the state and the evolution of the metallization ageing with such a technique.

Язык оригиналаАнглийский
Страницы (с-по)1127-1135
Число страниц9
ЖурналMicroelectronics Reliability
Том51
Номер выпуска6
DOI
СостояниеОпубликовано - 1 июн 2011
Опубликовано для внешнего пользованияДа

Отпечаток

Semiconductor devices
Metallizing
Eddy currents
Power electronics
eddy currents
semiconductor devices
Aging of materials
deterioration
electronics
modules
Semiconductor materials
causes
sensors
electric potential
Deterioration
Sensors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Цитировать

Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique. / Nguyen, T. A.; Joubert, P. Y.; Lefebvre, S.; Chaplier, G.; Rousseau, L.

В: Microelectronics Reliability, Том 51, № 6, 01.06.2011, стр. 1127-1135.

Результат исследований: Материалы для журналаСтатья

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