Studies of relativistic electron scattering at planar alignment in a thin Si crystal

Y. Takabayashi, Yu L. Pivovarov, T. A. Tukhfatullin

Результат исследований: Материалы для журналаСтатья

15 Цитирования (Scopus)

Аннотация

Experiments on 255-MeV electron scattering under (220) planar channeling conditions in a Si crystal were carried out at the linac of the SAGA Light Source. The spatial and angular distributions of electrons penetrating through a 20-μm thick Si crystal at different incident angles with respect to the (220) plane were measured, and features characteristic of the planar alignment were identified. The experimental results were compared with computer simulations, and showed a reasonable agreement. A comparison with doughnut scattering at axial channeling in the same crystal was also performed. It was confirmed that the planar alignment effect is weaker than the axial alignment effect. These studies are important for understanding the basic mechanism of electron scattering and radiation processes in a crystal.

Язык оригиналаАнглийский
Страницы (с-по)1520-1525
Число страниц6
ЖурналPhysics Letters, Section A: General, Atomic and Solid State Physics
Том378
Номер выпуска21
DOI
СостояниеОпубликовано - 11 апр 2014

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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