Structure and properties of the surface layer of Ti/SiC-ceramic system irradiated by low-energy pulsed electron beam

A. A. Leonov, E. E. Kuzichkin, V. V. Shugurov, A. D. Teresov, M. P. Kalashnikov, M. S. Petyukevich, V. V. Polisadova, Yu F. Ivanov

Результат исследований: Материалы для журнала

Выдержка

The results of the investigation of evolution structural phase states of the surface layer film (Ti)/substrate (SiC-ceramics) system subjected to processing with an intense pulsed electron beam are presented (Ti film 0.5 μm thick was deposited on the surface SiC ceramic). Samples of SiC ceramics obtained by SPS-sintering were used. Irradiation with an intense pulsed electron beam of submillisecond duration was carried out at the SOLO device under the condition: energy density of the electron beam of 15 J/cm2, pulse duration of 200 μs, quantity of pulses - 20 and 30. The X-ray diffraction analysis of the treated electron beam Ti/SiC system showed that under the specified irradiation regime the phase composition formed in the surface layer and the volume fraction of the phases depend on the quantity of irradiation pulses. At 20 pulses, following phase composition of the surface layer was formed: SiC - 18.5 %, TiC - 36.6 %, Ti5Si3 - 44.9 %; at 30 pulses, a phase relationship: SiC - 81.6 %, TiC - 12.7 %, Si - 0.5 %, C - 5.2 %. Scanning and transmission electron microscopy revealed, that irrespective of the quantity of pulses of the electron beam, takes place the formation of a surface layer with a globular structure, formed as a result of melting of the titanium film, which contains a droplet fraction. The particles of the drop fraction had a submicro-nanocrystalline structure and were enriched mainly by titanium, silicon and carbon atoms. It was established that electron beam treatment with 30 pulses leads to formation of round-shaped regions on the surface of irradiation, the microhardness of which varies from 55 GPa to 96 GPa, which is several times the microhardness of the initial SiC ceramic (36 GPa). It was suggested that these regions were formed as a result of electron beam treatment of the surface layer, which contains a drop fraction.

Язык оригиналаАнглийский
Номер статьи032040
ЖурналJournal of Physics: Conference Series
Том1115
Номер выпуска3
DOI
СостояниеОпубликовано - 27 ноя 2018
Событие6th International Congress on Energy Fluxes and Radiation Effects 2018, EFRE 2018 - Tomsk, Российская Федерация
Продолжительность: 16 сен 201822 сен 2018

Отпечаток

surface layers
electron beams
ceramics
pulses
irradiation
energy
microhardness
titanium
nanostructure (characteristics)
sintering
pulse duration
flux density
melting
transmission electron microscopy
scanning electron microscopy
carbon
silicon
diffraction
atoms
x rays

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Цитировать

Structure and properties of the surface layer of Ti/SiC-ceramic system irradiated by low-energy pulsed electron beam. / Leonov, A. A.; Kuzichkin, E. E.; Shugurov, V. V.; Teresov, A. D.; Kalashnikov, M. P.; Petyukevich, M. S.; Polisadova, V. V.; Ivanov, Yu F.

В: Journal of Physics: Conference Series, Том 1115, № 3, 032040, 27.11.2018.

Результат исследований: Материалы для журнала

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abstract = "The results of the investigation of evolution structural phase states of the surface layer film (Ti)/substrate (SiC-ceramics) system subjected to processing with an intense pulsed electron beam are presented (Ti film 0.5 μm thick was deposited on the surface SiC ceramic). Samples of SiC ceramics obtained by SPS-sintering were used. Irradiation with an intense pulsed electron beam of submillisecond duration was carried out at the SOLO device under the condition: energy density of the electron beam of 15 J/cm2, pulse duration of 200 μs, quantity of pulses - 20 and 30. The X-ray diffraction analysis of the treated electron beam Ti/SiC system showed that under the specified irradiation regime the phase composition formed in the surface layer and the volume fraction of the phases depend on the quantity of irradiation pulses. At 20 pulses, following phase composition of the surface layer was formed: SiC - 18.5 {\%}, TiC - 36.6 {\%}, Ti5Si3 - 44.9 {\%}; at 30 pulses, a phase relationship: SiC - 81.6 {\%}, TiC - 12.7 {\%}, Si - 0.5 {\%}, C - 5.2 {\%}. Scanning and transmission electron microscopy revealed, that irrespective of the quantity of pulses of the electron beam, takes place the formation of a surface layer with a globular structure, formed as a result of melting of the titanium film, which contains a droplet fraction. The particles of the drop fraction had a submicro-nanocrystalline structure and were enriched mainly by titanium, silicon and carbon atoms. It was established that electron beam treatment with 30 pulses leads to formation of round-shaped regions on the surface of irradiation, the microhardness of which varies from 55 GPa to 96 GPa, which is several times the microhardness of the initial SiC ceramic (36 GPa). It was suggested that these regions were formed as a result of electron beam treatment of the surface layer, which contains a drop fraction.",
author = "Leonov, {A. A.} and Kuzichkin, {E. E.} and Shugurov, {V. V.} and Teresov, {A. D.} and Kalashnikov, {M. P.} and Petyukevich, {M. S.} and Polisadova, {V. V.} and Ivanov, {Yu F.}",
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T1 - Structure and properties of the surface layer of Ti/SiC-ceramic system irradiated by low-energy pulsed electron beam

AU - Leonov, A. A.

AU - Kuzichkin, E. E.

AU - Shugurov, V. V.

AU - Teresov, A. D.

AU - Kalashnikov, M. P.

AU - Petyukevich, M. S.

AU - Polisadova, V. V.

AU - Ivanov, Yu F.

PY - 2018/11/27

Y1 - 2018/11/27

N2 - The results of the investigation of evolution structural phase states of the surface layer film (Ti)/substrate (SiC-ceramics) system subjected to processing with an intense pulsed electron beam are presented (Ti film 0.5 μm thick was deposited on the surface SiC ceramic). Samples of SiC ceramics obtained by SPS-sintering were used. Irradiation with an intense pulsed electron beam of submillisecond duration was carried out at the SOLO device under the condition: energy density of the electron beam of 15 J/cm2, pulse duration of 200 μs, quantity of pulses - 20 and 30. The X-ray diffraction analysis of the treated electron beam Ti/SiC system showed that under the specified irradiation regime the phase composition formed in the surface layer and the volume fraction of the phases depend on the quantity of irradiation pulses. At 20 pulses, following phase composition of the surface layer was formed: SiC - 18.5 %, TiC - 36.6 %, Ti5Si3 - 44.9 %; at 30 pulses, a phase relationship: SiC - 81.6 %, TiC - 12.7 %, Si - 0.5 %, C - 5.2 %. Scanning and transmission electron microscopy revealed, that irrespective of the quantity of pulses of the electron beam, takes place the formation of a surface layer with a globular structure, formed as a result of melting of the titanium film, which contains a droplet fraction. The particles of the drop fraction had a submicro-nanocrystalline structure and were enriched mainly by titanium, silicon and carbon atoms. It was established that electron beam treatment with 30 pulses leads to formation of round-shaped regions on the surface of irradiation, the microhardness of which varies from 55 GPa to 96 GPa, which is several times the microhardness of the initial SiC ceramic (36 GPa). It was suggested that these regions were formed as a result of electron beam treatment of the surface layer, which contains a drop fraction.

AB - The results of the investigation of evolution structural phase states of the surface layer film (Ti)/substrate (SiC-ceramics) system subjected to processing with an intense pulsed electron beam are presented (Ti film 0.5 μm thick was deposited on the surface SiC ceramic). Samples of SiC ceramics obtained by SPS-sintering were used. Irradiation with an intense pulsed electron beam of submillisecond duration was carried out at the SOLO device under the condition: energy density of the electron beam of 15 J/cm2, pulse duration of 200 μs, quantity of pulses - 20 and 30. The X-ray diffraction analysis of the treated electron beam Ti/SiC system showed that under the specified irradiation regime the phase composition formed in the surface layer and the volume fraction of the phases depend on the quantity of irradiation pulses. At 20 pulses, following phase composition of the surface layer was formed: SiC - 18.5 %, TiC - 36.6 %, Ti5Si3 - 44.9 %; at 30 pulses, a phase relationship: SiC - 81.6 %, TiC - 12.7 %, Si - 0.5 %, C - 5.2 %. Scanning and transmission electron microscopy revealed, that irrespective of the quantity of pulses of the electron beam, takes place the formation of a surface layer with a globular structure, formed as a result of melting of the titanium film, which contains a droplet fraction. The particles of the drop fraction had a submicro-nanocrystalline structure and were enriched mainly by titanium, silicon and carbon atoms. It was established that electron beam treatment with 30 pulses leads to formation of round-shaped regions on the surface of irradiation, the microhardness of which varies from 55 GPa to 96 GPa, which is several times the microhardness of the initial SiC ceramic (36 GPa). It was suggested that these regions were formed as a result of electron beam treatment of the surface layer, which contains a drop fraction.

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