Stability of color centers in LiYF 4 crystals at low temperatures

V. M. Lisitsyn, Y. V. Bikhert, V. I. Korepanov, L. A. Lisitsyna, A. K. Dauletbekova, A. T. Akylbekov, V. M. Reiterov

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

1 Цитирования (Scopus)

Аннотация

This paper presents the results of examining the stability of induced radiation defects in crystals at 15K. The following regularities have been established. Defects induced at low temperatures in pure and Nd 3+ doped LiYF 4 crystals are unstable: upon termination of radiation, even at 15K induced color centers are visibly destructed, exposure to the halogen lamp light increases the destruction speed significantly. Heating crystals up to 80K results in complete destruction of color centers induced at 15K.

Язык оригиналаАнглийский
Название основной публикацииIOP Conference Series: Materials Science and Engineering
Том38
Издание1
DOI
СостояниеОпубликовано - 2012
СобытиеInternational Conference on Functional Materials and Nanotechnologies, FM and NT 2012 - Riga, Латвия
Продолжительность: 17 апр 201220 апр 2012

Другое

ДругоеInternational Conference on Functional Materials and Nanotechnologies, FM and NT 2012
СтранаЛатвия
ГородRiga
Период17.4.1220.4.12

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ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

Цитировать

Lisitsyn, V. M., Bikhert, Y. V., Korepanov, V. I., Lisitsyna, L. A., Dauletbekova, A. K., Akylbekov, A. T., & Reiterov, V. M. (2012). Stability of color centers in LiYF 4 crystals at low temperatures В IOP Conference Series: Materials Science and Engineering (1 ред., Том 38). [012039] https://doi.org/10.1088/1757-899X/38/1/012039