Spectral analysis of nanosize forms of carbon synthesized by pulsed intense ion beams

G. E. Remnev, Vladimir Vasilevich Uglov, V. I. Shymanski, P. Konarski, M. P. Samtsov, Sergey Khonstantinovich Pavlov, N. M. Lapchuk

Результат исследований: Материалы для журналаСтатья

5 Цитирования (Scopus)

Выдержка

The research results of nanodiamond formation in silicon during high intense ion implantation are presented. To produce a near-surface layer containing nanodiamond clusters a pulse ion implantation of carbon ions with different ion current densities (25-100cA/cm 2) and pulse numbers (10-500) was used. According to the Raman spectroscopy and electron paramagnetic resonance data the optimal parameters of ion implantation resulting in nanodiamond formation were found. Nanodiamonds are formed in the internal layer due to ion implantation with low pulse number (less than 100) and high ion current density (70-80 A/cm 2). An increase in pulse number results in amorphization of the implanted layer due to hydrogen atom accumulation that was revealed by the secondary ion mass-spectroscopy (SIMS) method.

Язык оригиналаАнглийский
Страницы (с-по)118-121
Число страниц4
ЖурналVacuum
Том89
Номер выпуска1
DOI
СостояниеОпубликовано - 1 мар 2013

Отпечаток

Nanodiamonds
Ion implantation
Spectrum analysis
Ion beams
spectrum analysis
ion implantation
Carbon
ion beams
Ions
carbon
pulses
ion currents
Current density
current density
Amorphization
Silicon
Paramagnetic resonance
Raman spectroscopy
Hydrogen
hydrogen atoms

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

Цитировать

Spectral analysis of nanosize forms of carbon synthesized by pulsed intense ion beams. / Remnev, G. E.; Uglov, Vladimir Vasilevich; Shymanski, V. I.; Konarski, P.; Samtsov, M. P.; Pavlov, Sergey Khonstantinovich; Lapchuk, N. M.

В: Vacuum, Том 89, № 1, 01.03.2013, стр. 118-121.

Результат исследований: Материалы для журналаСтатья

Remnev, G. E. ; Uglov, Vladimir Vasilevich ; Shymanski, V. I. ; Konarski, P. ; Samtsov, M. P. ; Pavlov, Sergey Khonstantinovich ; Lapchuk, N. M. / Spectral analysis of nanosize forms of carbon synthesized by pulsed intense ion beams. В: Vacuum. 2013 ; Том 89, № 1. стр. 118-121.
@article{39dea10a093c455abfc7ecb86a1db4dc,
title = "Spectral analysis of nanosize forms of carbon synthesized by pulsed intense ion beams",
abstract = "The research results of nanodiamond formation in silicon during high intense ion implantation are presented. To produce a near-surface layer containing nanodiamond clusters a pulse ion implantation of carbon ions with different ion current densities (25-100cA/cm 2) and pulse numbers (10-500) was used. According to the Raman spectroscopy and electron paramagnetic resonance data the optimal parameters of ion implantation resulting in nanodiamond formation were found. Nanodiamonds are formed in the internal layer due to ion implantation with low pulse number (less than 100) and high ion current density (70-80 A/cm 2). An increase in pulse number results in amorphization of the implanted layer due to hydrogen atom accumulation that was revealed by the secondary ion mass-spectroscopy (SIMS) method.",
keywords = "Amorphization, Carbon implantation, High intensity ion implantation, Nanodiamonds, Raman spectroscopy, Silicon, SIMS depth profile analysis",
author = "Remnev, {G. E.} and Uglov, {Vladimir Vasilevich} and Shymanski, {V. I.} and P. Konarski and Samtsov, {M. P.} and Pavlov, {Sergey Khonstantinovich} and Lapchuk, {N. M.}",
year = "2013",
month = "3",
day = "1",
doi = "10.1016/j.vacuum.2012.02.037",
language = "English",
volume = "89",
pages = "118--121",
journal = "Vacuum",
issn = "0042-207X",
publisher = "Elsevier Limited",
number = "1",

}

TY - JOUR

T1 - Spectral analysis of nanosize forms of carbon synthesized by pulsed intense ion beams

AU - Remnev, G. E.

AU - Uglov, Vladimir Vasilevich

AU - Shymanski, V. I.

AU - Konarski, P.

AU - Samtsov, M. P.

AU - Pavlov, Sergey Khonstantinovich

AU - Lapchuk, N. M.

PY - 2013/3/1

Y1 - 2013/3/1

N2 - The research results of nanodiamond formation in silicon during high intense ion implantation are presented. To produce a near-surface layer containing nanodiamond clusters a pulse ion implantation of carbon ions with different ion current densities (25-100cA/cm 2) and pulse numbers (10-500) was used. According to the Raman spectroscopy and electron paramagnetic resonance data the optimal parameters of ion implantation resulting in nanodiamond formation were found. Nanodiamonds are formed in the internal layer due to ion implantation with low pulse number (less than 100) and high ion current density (70-80 A/cm 2). An increase in pulse number results in amorphization of the implanted layer due to hydrogen atom accumulation that was revealed by the secondary ion mass-spectroscopy (SIMS) method.

AB - The research results of nanodiamond formation in silicon during high intense ion implantation are presented. To produce a near-surface layer containing nanodiamond clusters a pulse ion implantation of carbon ions with different ion current densities (25-100cA/cm 2) and pulse numbers (10-500) was used. According to the Raman spectroscopy and electron paramagnetic resonance data the optimal parameters of ion implantation resulting in nanodiamond formation were found. Nanodiamonds are formed in the internal layer due to ion implantation with low pulse number (less than 100) and high ion current density (70-80 A/cm 2). An increase in pulse number results in amorphization of the implanted layer due to hydrogen atom accumulation that was revealed by the secondary ion mass-spectroscopy (SIMS) method.

KW - Amorphization

KW - Carbon implantation

KW - High intensity ion implantation

KW - Nanodiamonds

KW - Raman spectroscopy

KW - Silicon

KW - SIMS depth profile analysis

UR - http://www.scopus.com/inward/record.url?scp=84869083976&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84869083976&partnerID=8YFLogxK

U2 - 10.1016/j.vacuum.2012.02.037

DO - 10.1016/j.vacuum.2012.02.037

M3 - Article

AN - SCOPUS:84869083976

VL - 89

SP - 118

EP - 121

JO - Vacuum

JF - Vacuum

SN - 0042-207X

IS - 1

ER -