Some specific features of edge luminescence of CdS(O) in the context of the Band's Anticrossing theory

N. K. Morozova, N. D. Danilevich, V. M. Semenov, V. G. Galstyan, V. I. Oleshko, Svetlana Sergeevna Vil'chinskaya, V. M. Lisitsyn

Результат исследований: Материалы для журналаСтатья

2 Цитирования (Scopus)

Выдержка

The nature of luminescence bands prevailing in the near-edge spectrum of the CdS(O) crystals at high excitation intensities (1025-1026 cm-3 s-1) is clarified. It is shown that the alloys containing oxygen dissolved in II-VI crystals represent heterogeneous systems with oxygen segregating in the crystal matrix.

Язык оригиналаАнглийский
Страницы (с-по)1628-1634
Число страниц7
ЖурналSemiconductors
Том43
Номер выпуска13
DOI
СостояниеОпубликовано - 1 дек 2009

Отпечаток

Luminescence
luminescence
Crystals
crystals
oxygen
Dissolved oxygen
Oxygen
matrices
excitation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Цитировать

Some specific features of edge luminescence of CdS(O) in the context of the Band's Anticrossing theory. / Morozova, N. K.; Danilevich, N. D.; Semenov, V. M.; Galstyan, V. G.; Oleshko, V. I.; Vil'chinskaya, Svetlana Sergeevna; Lisitsyn, V. M.

В: Semiconductors, Том 43, № 13, 01.12.2009, стр. 1628-1634.

Результат исследований: Материалы для журналаСтатья

Morozova, N. K. ; Danilevich, N. D. ; Semenov, V. M. ; Galstyan, V. G. ; Oleshko, V. I. ; Vil'chinskaya, Svetlana Sergeevna ; Lisitsyn, V. M. / Some specific features of edge luminescence of CdS(O) in the context of the Band's Anticrossing theory. В: Semiconductors. 2009 ; Том 43, № 13. стр. 1628-1634.
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AU - Galstyan, V. G.

AU - Oleshko, V. I.

AU - Vil'chinskaya, Svetlana Sergeevna

AU - Lisitsyn, V. M.

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