Size effect in AlN/SiN multilayered films irradiated with helium and argon ions

Аннотация

The results of microstructure and phase composition of the AlN/SiN_x multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiN_x) phases with thicknesses from 2 to 10 nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30 keV) and argon (180 keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiN_x layers. It is of the consequence of enhanced implanted ions migration towards the a-SiN_x layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4 nm and grows up to 4–5 nm after the post-irradiation vacuum (800 °C) annealing. The amorphous a-SiN_x layers are believed to serve as sinks for radiation-induced defects.

Язык оригинала	Английский
Страницы (с-по)	228-235
Число страниц	8
Журнал	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Том	435
DOI	https://doi.org/10.1016/j.nimb.2018.01.012
Состояние	Опубликовано - 15 ноя 2018

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

Доступ к документу

10.1016/j.nimb.2018.01.012

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Uglov, V. V., Kvasov, N. T., Remnev, G. E., Shymanski, V. I., Korenevski, E. L., Zlotski, S. V., Abadias, G., O'Connel, J., & van Vuuren, A. (2018). Size effect in AlN/SiN multilayered films irradiated with helium and argon ions. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 435, 228-235. https://doi.org/10.1016/j.nimb.2018.01.012

Size effect in AlN/SiN multilayered films irradiated with helium and argon ions. / Uglov, V. V.; Kvasov, N. T.; Remnev, G. E.; Shymanski, V. I.; Korenevski, E. L.; Zlotski, S. V.; Abadias, G.; O'Connel, J.; van Vuuren, A.

В: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Том 435, 15.11.2018, стр. 228-235.

Результат исследований: Материалы для журнала › Статья › рецензирование

Uglov, VV, Kvasov, NT, Remnev, GE, Shymanski, VI, Korenevski, EL, Zlotski, SV, Abadias, G, O'Connel, J & van Vuuren, A 2018, 'Size effect in AlN/SiN multilayered films irradiated with helium and argon ions', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, том. 435, стр. 228-235. https://doi.org/10.1016/j.nimb.2018.01.012

Uglov, V. V. ; Kvasov, N. T. ; Remnev, G. E. ; Shymanski, V. I. ; Korenevski, E. L. ; Zlotski, S. V. ; Abadias, G. ; O'Connel, J. ; van Vuuren, A. / Size effect in AlN/SiN multilayered films irradiated with helium and argon ions. В: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2018 ; Том 435. стр. 228-235.

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title = "Size effect in AlN/SiN multilayered films irradiated with helium and argon ions",

abstract = "The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10 nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30 keV) and argon (180 keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4 nm and grows up to 4–5 nm after the post-irradiation vacuum (800 °C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects.",

keywords = "a-SiN, Aluminum nitride, Amorphous layers, Argon ions, Bubbles, Helium ions, Implantation, Multilayered films, nc-AlN, Post-irradiated annealing, Radiation defects, Silicon nitride",

author = "Uglov, {V. V.} and Kvasov, {N. T.} and Remnev, {G. E.} and Shymanski, {V. I.} and Korenevski, {E. L.} and Zlotski, {S. V.} and G. Abadias and J. O'Connel and {van Vuuren}, A.",

year = "2018",

month = nov,

day = "15",

doi = "10.1016/j.nimb.2018.01.012",

language = "English",

volume = "435",

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journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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T1 - Size effect in AlN/SiN multilayered films irradiated with helium and argon ions

AU - Uglov, V. V.

AU - Kvasov, N. T.

AU - Remnev, G. E.

AU - Shymanski, V. I.

AU - Korenevski, E. L.

AU - Zlotski, S. V.

AU - Abadias, G.

AU - O'Connel, J.

AU - van Vuuren, A.

PY - 2018/11/15

Y1 - 2018/11/15

N2 - The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10 nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30 keV) and argon (180 keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4 nm and grows up to 4–5 nm after the post-irradiation vacuum (800 °C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects.

AB - The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10 nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30 keV) and argon (180 keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4 nm and grows up to 4–5 nm after the post-irradiation vacuum (800 °C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects.

KW - a-SiN

KW - Aluminum nitride

KW - Amorphous layers

KW - Argon ions

KW - Bubbles

KW - Helium ions

KW - Implantation

KW - Multilayered films

KW - nc-AlN

KW - Post-irradiated annealing

KW - Radiation defects

KW - Silicon nitride

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