Size effect in AlN/SiN multilayered films irradiated with helium and argon ions

V. V. Uglov, N. T. Kvasov, G. E. Remnev, V. I. Shymanski, E. L. Korenevski, S. V. Zlotski, G. Abadias, J. O'Connel, A. van Vuuren

Результат исследований: Материалы для журналаСтатья

4 Цитирования (Scopus)

Выдержка

The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10 nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30 keV) and argon (180 keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4 nm and grows up to 4–5 nm after the post-irradiation vacuum (800 °C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects.

Язык оригиналаАнглийский
Страницы (с-по)228-235
Число страниц8
ЖурналNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Том435
DOI
СостояниеОпубликовано - 15 ноя 2018

Отпечаток

helium ions
Helium
Argon
argon
Irradiation
irradiation
Ions
bubbles
Radiation
Bubble formation
ions
Reactive sputtering
Point defects
radiation
High resolution transmission electron microscopy
sinks
Phase composition
crystal lattices
Crystal lattices
Magnetron sputtering

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

Цитировать

Size effect in AlN/SiN multilayered films irradiated with helium and argon ions. / Uglov, V. V.; Kvasov, N. T.; Remnev, G. E.; Shymanski, V. I.; Korenevski, E. L.; Zlotski, S. V.; Abadias, G.; O'Connel, J.; van Vuuren, A.

В: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Том 435, 15.11.2018, стр. 228-235.

Результат исследований: Материалы для журналаСтатья

Uglov, V. V. ; Kvasov, N. T. ; Remnev, G. E. ; Shymanski, V. I. ; Korenevski, E. L. ; Zlotski, S. V. ; Abadias, G. ; O'Connel, J. ; van Vuuren, A. / Size effect in AlN/SiN multilayered films irradiated with helium and argon ions. В: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2018 ; Том 435. стр. 228-235.
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abstract = "The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10 nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30 keV) and argon (180 keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4 nm and grows up to 4–5 nm after the post-irradiation vacuum (800 °C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects.",
keywords = "a-SiN, Aluminum nitride, Amorphous layers, Argon ions, Bubbles, Helium ions, Implantation, Multilayered films, nc-AlN, Post-irradiated annealing, Radiation defects, Silicon nitride",
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T1 - Size effect in AlN/SiN multilayered films irradiated with helium and argon ions

AU - Uglov, V. V.

AU - Kvasov, N. T.

AU - Remnev, G. E.

AU - Shymanski, V. I.

AU - Korenevski, E. L.

AU - Zlotski, S. V.

AU - Abadias, G.

AU - O'Connel, J.

AU - van Vuuren, A.

PY - 2018/11/15

Y1 - 2018/11/15

N2 - The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10 nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30 keV) and argon (180 keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4 nm and grows up to 4–5 nm after the post-irradiation vacuum (800 °C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects.

AB - The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10 nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30 keV) and argon (180 keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4 nm and grows up to 4–5 nm after the post-irradiation vacuum (800 °C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects.

KW - a-SiN

KW - Aluminum nitride

KW - Amorphous layers

KW - Argon ions

KW - Bubbles

KW - Helium ions

KW - Implantation

KW - Multilayered films

KW - nc-AlN

KW - Post-irradiated annealing

KW - Radiation defects

KW - Silicon nitride

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SN - 0168-583X

ER -