Size effect in AlN/SiN multilayered films irradiated with helium and argon ions

V. V. Uglov, N. T. Kvasov, G. E. Remnev, V. I. Shymanski, E. L. Korenevski, S. V. Zlotski, G. Abadias, J. O'Connel, A. van Vuuren

Исследовательская школа физики высокоэнергетических процессов

Результат исследований: Материалы для журнала › Статья

6 Цитирования (Scopus)

Аннотация

The results of microstructure and phase composition of the AlN/SiN_x multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiN_x) phases with thicknesses from 2 to 10 nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30 keV) and argon (180 keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiN_x layers. It is of the consequence of enhanced implanted ions migration towards the a-SiN_x layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4 nm and grows up to 4–5 nm after the post-irradiation vacuum (800 °C) annealing. The amorphous a-SiN_x layers are believed to serve as sinks for radiation-induced defects.

Язык оригинала	Английский
Страницы (с-по)	228-235
Число страниц	8
Журнал	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Том	435
DOI	https://doi.org/10.1016/j.nimb.2018.01.012
Состояние	Опубликовано - 15 ноя 2018

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ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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Uglov, V. V., Kvasov, N. T., Remnev, G. E., Shymanski, V. I., Korenevski, E. L., Zlotski, S. V., Abadias, G., O'Connel, J., & van Vuuren, A. (2018). Size effect in AlN/SiN multilayered films irradiated with helium and argon ions. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 435, 228-235. https://doi.org/10.1016/j.nimb.2018.01.012

Size effect in AlN/SiN multilayered films irradiated with helium and argon ions. / Uglov, V. V.; Kvasov, N. T.; Remnev, G. E.; Shymanski, V. I.; Korenevski, E. L.; Zlotski, S. V.; Abadias, G.; O'Connel, J.; van Vuuren, A.

В: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Том 435, 15.11.2018, стр. 228-235.

Результат исследований: Материалы для журнала › Статья

Uglov, VV, Kvasov, NT, Remnev, GE, Shymanski, VI, Korenevski, EL, Zlotski, SV, Abadias, G, O'Connel, J & van Vuuren, A 2018, 'Size effect in AlN/SiN multilayered films irradiated with helium and argon ions', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, том. 435, стр. 228-235. https://doi.org/10.1016/j.nimb.2018.01.012

Uglov, V. V. ; Kvasov, N. T. ; Remnev, G. E. ; Shymanski, V. I. ; Korenevski, E. L. ; Zlotski, S. V. ; Abadias, G. ; O'Connel, J. ; van Vuuren, A. / Size effect in AlN/SiN multilayered films irradiated with helium and argon ions. В: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2018 ; Том 435. стр. 228-235.

@article{5c0bc637ea31486e8987f1324f0eb873,

title = "Size effect in AlN/SiN multilayered films irradiated with helium and argon ions",

abstract = "The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10 nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30 keV) and argon (180 keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4 nm and grows up to 4–5 nm after the post-irradiation vacuum (800 °C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects.",

keywords = "a-SiN, Aluminum nitride, Amorphous layers, Argon ions, Bubbles, Helium ions, Implantation, Multilayered films, nc-AlN, Post-irradiated annealing, Radiation defects, Silicon nitride",

author = "Uglov, {V. V.} and Kvasov, {N. T.} and Remnev, {G. E.} and Shymanski, {V. I.} and Korenevski, {E. L.} and Zlotski, {S. V.} and G. Abadias and J. O'Connel and {van Vuuren}, A.",

year = "2018",

month = nov

day = "15",

doi = "10.1016/j.nimb.2018.01.012",

language = "English",

volume = "435",

pages = "228--235",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

}

TY - JOUR

T1 - Size effect in AlN/SiN multilayered films irradiated with helium and argon ions

AU - Uglov, V. V.

AU - Kvasov, N. T.

AU - Remnev, G. E.

AU - Shymanski, V. I.

AU - Korenevski, E. L.

AU - Zlotski, S. V.

AU - Abadias, G.

AU - O'Connel, J.

AU - van Vuuren, A.

PY - 2018/11/15

Y1 - 2018/11/15

N2 - The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10 nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30 keV) and argon (180 keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4 nm and grows up to 4–5 nm after the post-irradiation vacuum (800 °C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects.

AB - The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10 nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30 keV) and argon (180 keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4 nm and grows up to 4–5 nm after the post-irradiation vacuum (800 °C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects.

KW - a-SiN

KW - Aluminum nitride

KW - Amorphous layers

KW - Argon ions

KW - Bubbles

KW - Helium ions

KW - Implantation

KW - Multilayered films

KW - nc-AlN

KW - Post-irradiated annealing

KW - Radiation defects

KW - Silicon nitride

UR - http://www.scopus.com/inward/record.url?scp=85041957015&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85041957015&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2018.01.012

DO - 10.1016/j.nimb.2018.01.012

M3 - Article

AN - SCOPUS:85041957015

VL - 435

SP - 228

EP - 235

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

ER -

Доступ к документу

10.1016/j.nimb.2018.01.012