Simulation of the formation of a runaway electron beam in an overvolted gas gap breakdown

Valery Alexandrovich Shklyaev, S. Ya Belomyttsev, V. V. Ryzhov

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Аннотация

The paper reports on numerical simulation to inquire into the breakdown of a gas-filled diode in a highly inhomogeneous electric field. It is shown that early in the breakdown a runaway electron beam (RAEB) is formed in the diode and this strongly affects the rate of breakdown development. The energy gained by RAEB electrons corresponds to the electron energy gained under the same conditions in vacuum. The properties of the emission surface of the cathode determine the instant at which the beam is formed during subnanosecond voltage pulse rise time and hence the beam current and the energy spectrum of runaway electrons.

Язык оригинала	Английский
Номер статьи	113303
Журнал	Journal of Applied Physics
Том	112
Номер выпуска	11
DOI	https://doi.org/10.1063/1.4768912
Состояние	Опубликовано - 1 дек 2012

ASJC Scopus subject areas

Physics and Astronomy(all)

Доступ к документу

10.1063/1.4768912

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Shklyaev, VA., Belomyttsev, S. Y., & Ryzhov, V. V. (2012). Simulation of the formation of a runaway electron beam in an overvolted gas gap breakdown. Journal of Applied Physics, 112(11), [113303]. https://doi.org/10.1063/1.4768912

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