Выдержка
A computer code is developed to calculate the radiation energy losses (RELs) of electrons during both 〈100〉 axis and (100) plane channeling in a thin Si crystal. A computer simulation of these losses is carried out by taking the initial angular divergence of the beam into account, and the REL dependences on the angle of electron entry into the crystal are obtained for both axial and planar channeling (orientational dependences). The calculations are carried out in connection with experiments on the interaction of 20-255 MeV electrons with crystals conducted at the SAGA Light Source linear accelerator (Tosu, Saga, Japan). The simulation results show the possibility of using the orientational dependence of the RELs of channeled electrons in thin crystals to diagnose the initial angular divergence of the electron beam and to orient crystals.
| Язык оригинала | Английский |
|---|---|
| Страницы (с-по) | 494-501 |
| Число страниц | 8 |
| Журнал | Journal of Surface Investigation |
| Том | 8 |
| Номер выпуска | 3 |
| DOI | |
| Состояние | Опубликовано - 1 янв 2014 |
Отпечаток
ASJC Scopus subject areas
- Surfaces, Coatings and Films
Цитировать
Simulation of radiation energy losses by channeled relativistic electrons in a crystal. / Abdrashitov, Sergey Vladimirovich; Bogdanov, O. V.; Pivovarov, Yu L.; Tukhfatullin, T. A.
В: Journal of Surface Investigation, Том 8, № 3, 01.01.2014, стр. 494-501.Результат исследований: Материалы для журнала › Статья
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TY - JOUR
T1 - Simulation of radiation energy losses by channeled relativistic electrons in a crystal
AU - Abdrashitov, Sergey Vladimirovich
AU - Bogdanov, O. V.
AU - Pivovarov, Yu L.
AU - Tukhfatullin, T. A.
PY - 2014/1/1
Y1 - 2014/1/1
N2 - A computer code is developed to calculate the radiation energy losses (RELs) of electrons during both 〈100〉 axis and (100) plane channeling in a thin Si crystal. A computer simulation of these losses is carried out by taking the initial angular divergence of the beam into account, and the REL dependences on the angle of electron entry into the crystal are obtained for both axial and planar channeling (orientational dependences). The calculations are carried out in connection with experiments on the interaction of 20-255 MeV electrons with crystals conducted at the SAGA Light Source linear accelerator (Tosu, Saga, Japan). The simulation results show the possibility of using the orientational dependence of the RELs of channeled electrons in thin crystals to diagnose the initial angular divergence of the electron beam and to orient crystals.
AB - A computer code is developed to calculate the radiation energy losses (RELs) of electrons during both 〈100〉 axis and (100) plane channeling in a thin Si crystal. A computer simulation of these losses is carried out by taking the initial angular divergence of the beam into account, and the REL dependences on the angle of electron entry into the crystal are obtained for both axial and planar channeling (orientational dependences). The calculations are carried out in connection with experiments on the interaction of 20-255 MeV electrons with crystals conducted at the SAGA Light Source linear accelerator (Tosu, Saga, Japan). The simulation results show the possibility of using the orientational dependence of the RELs of channeled electrons in thin crystals to diagnose the initial angular divergence of the electron beam and to orient crystals.
UR - http://www.scopus.com/inward/record.url?scp=84906859553&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84906859553&partnerID=8YFLogxK
U2 - 10.1134/S1027451014010236
DO - 10.1134/S1027451014010236
M3 - Article
AN - SCOPUS:84906859553
VL - 8
SP - 494
EP - 501
JO - Journal of Surface Investigation
JF - Journal of Surface Investigation
SN - 1027-4510
IS - 3
ER -