Silicon Carbide on Silicon (110): Surface Structure and Mechanisms of Epitaxial Growth

S. Sambonsuge, L. N. Nikitina, Yu Yu Hervieu, M. Suemitsu, S. N. Filimonov

Результат исследований: Материалы для журналаСтатьярецензирование

3 Цитирования (Scopus)

Аннотация

Results of investigations of the SiC/Si growth from monomethylsilane are reported. Growth conditions favoring the rotated epitaxy of 3C-SiC(111) films on Si(110) are determined experimentally. Surface energies of clean and hydrogen covered 3C-SiC(110) and 3C-SiC(111) surfaces are calculated with the density functional theory approach. It is shown that the change of the 3C-SiC film orientation with decreasing surface temperature and increasing monomethylsilane pressure may be induced by a reduction of the surface energy anisotropy due to the surface passivation by hydrogen.

Язык оригиналаАнглийский
Страницы (с-по)1439-1444
Число страниц6
ЖурналRussian Physics Journal
Том56
Номер выпуска12
DOI
СостояниеОпубликовано - 2014

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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