Self-supporting tantalum masks for deep X-ray lithography with synchrotron radiation

S. V. Litvin, V. G. Kanaev, E. G. Larionova, N. V. Glazunova, L. P. Gromova, V. I. Yurchenko, N. A. Timchenko, L. A. Mezentseva, V. P. Nazmov, V. F. Pindyurin

Результат исследований: Материалы для книги/типы отчетовГлава

Аннотация

Development of the present-day technologies of manufacturing deep structures with submicron elements bases on the deep X-ray lithography method with the usage of synchrotron radiation. Microelectronics-used X-ray patterns with a to 1.0 μm golden masking covering on different-type membranes become of unfit in this case both from the angle of contrast and from the standpoint of radiation and heat stability. X-ray patterns with the membrane on the base of tantalum 2 μm thick, that are high contrasting as to synchrotron radiation with wavelength of 0.2 to 1.0 nm, have been developed and manufactured. A set of pores 0.7 μm in diameter 1.5 μm apart in two directions was formed as the topological pattern.

Язык оригиналаАнглийский
Название основной публикацииProceedings of SPIE - The International Society for Optical Engineering
ИздательSociety of Photo-Optical Instrumentation Engineers
Страницы426-428
Число страниц3
Том3676
ИзданиеII
СостояниеОпубликовано - 1999
СобытиеProceedings of the 1999 Emerging Lithographic Technologies III - Santa Clara, CA, USA
Продолжительность: 15 мар 199917 мар 1999

Другое

ДругоеProceedings of the 1999 Emerging Lithographic Technologies III
ГородSanta Clara, CA, USA
Период15.3.9917.3.99

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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