Secondary electron emission induced by channeled relativistic electrons in a (1 1 0) Si crystal

Результат исследований: Материалы для журналаСтатья

3 Цитирования (Scopus)

Аннотация

A new effect that accompanies electrons channeled in a crystal is considered. This phenomenon was previously predicted was called channeling secondary electron emission (CSEE). The exact CSEE cross-section on the basis of using the exact Bloch wave function of electron channeled in a crystal is obtained. The detailed investigation of CSEE cross-section is performed. It is shown that angular distribution of electrons emitted due to CSEE has a complex form.

Язык оригиналаАнглийский
Страницы (с-по)14-18
Число страниц5
ЖурналNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Том276
DOI
СостояниеОпубликовано - 1 апр 2012

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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