Role of tension in microstructure formation in pure metals affected by ion implantation

Andrei N. Didenko, Alexander E. Ligachev, Yuriy P. Sharkeev, Galina V. Pushkareva, Eduard V. Kozlov, Alexander I. Ryabchikov, Ramil A. Nasyrov, Galina I. Shakhmeister

Результат исследований: Материалы для журналаСтатья

7 Цитирования (Scopus)

Выдержка

Dislocation structures in the near surface layers of α-Fe produced by repetitively pulsed intense Hf ion beams with doses of 0.23 × 1016 to 24.0 × 1016 ions cm-2 were studied by electron microscopy. Both ion implantation and plasma deposition were used. Under such conditions the maximum impurity concentration of Hf in α-Fe appeared to be 70 at.%, the dose of implanted ions being determined from profile analysis of Hf distribution by the RBS method. A developed dislocation structure is formed by ion implantation in the near surface layer of α-Fe over a depth of 100 μm. The dislocation density reaches its maximum value at a depth of 5-7 μm from the surface and is increased by about 1-2 orders of magnitude from that in the initial state. Static tensions formed in the doped layer play a decisive role in the formation of the dislocation structure.

Язык оригиналаАнглийский
Страницы (с-по)441-445
Число страниц5
ЖурналNuclear Inst. and Methods in Physics Research, B
Том61
Номер выпуска4
DOI
СостояниеОпубликовано - 1991

Отпечаток

Ion implantation
ion implantation
Metals
microstructure
Microstructure
metals
Ions
Plasma deposition
surface layers
dosage
Ion beams
Electron microscopy
Impurities
electron microscopy
ions
ion beams
impurities
profiles

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Цитировать

Role of tension in microstructure formation in pure metals affected by ion implantation. / Didenko, Andrei N.; Ligachev, Alexander E.; Sharkeev, Yuriy P.; Pushkareva, Galina V.; Kozlov, Eduard V.; Ryabchikov, Alexander I.; Nasyrov, Ramil A.; Shakhmeister, Galina I.

В: Nuclear Inst. and Methods in Physics Research, B, Том 61, № 4, 1991, стр. 441-445.

Результат исследований: Материалы для журналаСтатья

Didenko, Andrei N. ; Ligachev, Alexander E. ; Sharkeev, Yuriy P. ; Pushkareva, Galina V. ; Kozlov, Eduard V. ; Ryabchikov, Alexander I. ; Nasyrov, Ramil A. ; Shakhmeister, Galina I. / Role of tension in microstructure formation in pure metals affected by ion implantation. В: Nuclear Inst. and Methods in Physics Research, B. 1991 ; Том 61, № 4. стр. 441-445.
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abstract = "Dislocation structures in the near surface layers of α-Fe produced by repetitively pulsed intense Hf ion beams with doses of 0.23 × 1016 to 24.0 × 1016 ions cm-2 were studied by electron microscopy. Both ion implantation and plasma deposition were used. Under such conditions the maximum impurity concentration of Hf in α-Fe appeared to be 70 at.{\%}, the dose of implanted ions being determined from profile analysis of Hf distribution by the RBS method. A developed dislocation structure is formed by ion implantation in the near surface layer of α-Fe over a depth of 100 μm. The dislocation density reaches its maximum value at a depth of 5-7 μm from the surface and is increased by about 1-2 orders of magnitude from that in the initial state. Static tensions formed in the doped layer play a decisive role in the formation of the dislocation structure.",
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T1 - Role of tension in microstructure formation in pure metals affected by ion implantation

AU - Didenko, Andrei N.

AU - Ligachev, Alexander E.

AU - Sharkeev, Yuriy P.

AU - Pushkareva, Galina V.

AU - Kozlov, Eduard V.

AU - Ryabchikov, Alexander I.

AU - Nasyrov, Ramil A.

AU - Shakhmeister, Galina I.

PY - 1991

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N2 - Dislocation structures in the near surface layers of α-Fe produced by repetitively pulsed intense Hf ion beams with doses of 0.23 × 1016 to 24.0 × 1016 ions cm-2 were studied by electron microscopy. Both ion implantation and plasma deposition were used. Under such conditions the maximum impurity concentration of Hf in α-Fe appeared to be 70 at.%, the dose of implanted ions being determined from profile analysis of Hf distribution by the RBS method. A developed dislocation structure is formed by ion implantation in the near surface layer of α-Fe over a depth of 100 μm. The dislocation density reaches its maximum value at a depth of 5-7 μm from the surface and is increased by about 1-2 orders of magnitude from that in the initial state. Static tensions formed in the doped layer play a decisive role in the formation of the dislocation structure.

AB - Dislocation structures in the near surface layers of α-Fe produced by repetitively pulsed intense Hf ion beams with doses of 0.23 × 1016 to 24.0 × 1016 ions cm-2 were studied by electron microscopy. Both ion implantation and plasma deposition were used. Under such conditions the maximum impurity concentration of Hf in α-Fe appeared to be 70 at.%, the dose of implanted ions being determined from profile analysis of Hf distribution by the RBS method. A developed dislocation structure is formed by ion implantation in the near surface layer of α-Fe over a depth of 100 μm. The dislocation density reaches its maximum value at a depth of 5-7 μm from the surface and is increased by about 1-2 orders of magnitude from that in the initial state. Static tensions formed in the doped layer play a decisive role in the formation of the dislocation structure.

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