Role of polycrystalline titanium grain size in the formation of the concentration profiles of implanted aluminum ions

T. V. Vakhnii, G. A. Vershinin, Yu P. Sharkeev, I. A. Kurzina, A. Yu Eroshenko, T. S. Grekova, Boris Petrovich Gritsenko

Результат исследований: Материалы для журналаСтатья

5 Цитирования (Scopus)

Выдержка

The dependence of the depth of penetration of implanted aluminum atoms into polycrystalline titanium on the grain size of initial target samples is analyzed. The irradiation was carried out by a pulse-frequency ion beam of a Diana-2 source. The increase in the modified layer thickness to 250 nm with decreasing grain size in the initial material is revealed. In the interpretation of the observed regularities, we take into account the energetically inhomogeneous composition of a beam represented by three components and probable intense sputtering of the target surface by ions. In terms of the simulation, it is found that, in samples with relatively fine grains, a significant contribution to the formation of the depth profiles of implanted atoms comes from the radiation-induced diffusion; in samples with coarse grains, it comes from the diffusion along migrating extended defects, which appear and rearrange themselves in the process of ion implantation.

Язык оригиналаАнглийский
Страницы (с-по)353-358
Число страниц6
ЖурналJournal of Surface Investigation
Том4
Номер выпуска2
DOI
СостояниеОпубликовано - апр 2010

Отпечаток

Titanium
Aluminum
Ions
Atoms
Ion implantation
Ion beams
Sputtering
Irradiation
Radiation
Defects
Chemical analysis

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Цитировать

Role of polycrystalline titanium grain size in the formation of the concentration profiles of implanted aluminum ions. / Vakhnii, T. V.; Vershinin, G. A.; Sharkeev, Yu P.; Kurzina, I. A.; Eroshenko, A. Yu; Grekova, T. S.; Gritsenko, Boris Petrovich.

В: Journal of Surface Investigation, Том 4, № 2, 04.2010, стр. 353-358.

Результат исследований: Материалы для журналаСтатья

Vakhnii, T. V. ; Vershinin, G. A. ; Sharkeev, Yu P. ; Kurzina, I. A. ; Eroshenko, A. Yu ; Grekova, T. S. ; Gritsenko, Boris Petrovich. / Role of polycrystalline titanium grain size in the formation of the concentration profiles of implanted aluminum ions. В: Journal of Surface Investigation. 2010 ; Том 4, № 2. стр. 353-358.
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abstract = "The dependence of the depth of penetration of implanted aluminum atoms into polycrystalline titanium on the grain size of initial target samples is analyzed. The irradiation was carried out by a pulse-frequency ion beam of a Diana-2 source. The increase in the modified layer thickness to 250 nm with decreasing grain size in the initial material is revealed. In the interpretation of the observed regularities, we take into account the energetically inhomogeneous composition of a beam represented by three components and probable intense sputtering of the target surface by ions. In terms of the simulation, it is found that, in samples with relatively fine grains, a significant contribution to the formation of the depth profiles of implanted atoms comes from the radiation-induced diffusion; in samples with coarse grains, it comes from the diffusion along migrating extended defects, which appear and rearrange themselves in the process of ion implantation.",
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AU - Vakhnii, T. V.

AU - Vershinin, G. A.

AU - Sharkeev, Yu P.

AU - Kurzina, I. A.

AU - Eroshenko, A. Yu

AU - Grekova, T. S.

AU - Gritsenko, Boris Petrovich

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AB - The dependence of the depth of penetration of implanted aluminum atoms into polycrystalline titanium on the grain size of initial target samples is analyzed. The irradiation was carried out by a pulse-frequency ion beam of a Diana-2 source. The increase in the modified layer thickness to 250 nm with decreasing grain size in the initial material is revealed. In the interpretation of the observed regularities, we take into account the energetically inhomogeneous composition of a beam represented by three components and probable intense sputtering of the target surface by ions. In terms of the simulation, it is found that, in samples with relatively fine grains, a significant contribution to the formation of the depth profiles of implanted atoms comes from the radiation-induced diffusion; in samples with coarse grains, it comes from the diffusion along migrating extended defects, which appear and rearrange themselves in the process of ion implantation.

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