Robustness in short-circuit Mode of SiC MOSFETs

Cheng Chen, Denis Labrousse, Stéphane Lefebvre, Mickaël Petit, Cyril Buttay, Hervé Morel

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

19 Цитирования (Scopus)

Аннотация

This paper presents experimental robustness tests of Silicon Carbide (SiC) MOSFETs submitted to short-circuit operations. MOSFETs manufactured from different manufacturers have been tested and show different failure modes. A gate leakage current is detected before failure but is not necessarily responsible for the failure. For some tested devices, the failure appears in an open state mode after physical short-circuit between gate and source. The main failure mode is nevertheless a physical short-circuit between drain and source. However, the various tests show, despite the gate leakage current, excellent robustness of the various tested SiC MOSFETs under short-circuit.

Язык оригиналаАнглийский
Название основной публикацииPCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of
ИздательInstitute of Electrical and Electronics Engineers Inc.
ISBN (электронное издание)9783800739240
СостояниеОпубликовано - 1 янв 2015
Опубликовано для внешнего пользованияДа
Событие2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015 - Nuremberg, Германия
Продолжительность: 19 мая 201520 мая 2015

Серия публикаций

НазваниеPCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of

Конференция

Конференция2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015
СтранаГермания
ГородNuremberg
Период19.5.1520.5.15

ASJC Scopus subject areas

  • Industrial and Manufacturing Engineering
  • Renewable Energy, Sustainability and the Environment
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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  • Цитировать

    Chen, C., Labrousse, D., Lefebvre, S., Petit, M., Buttay, C., & Morel, H. (2015). Robustness in short-circuit Mode of SiC MOSFETs. В PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of [7149084] (PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of). Institute of Electrical and Electronics Engineers Inc..