Resonant electron tunneling in GaN/Ga1 - xAlxN(0001) strained structures with spontaneous polarization and piezoeffect

S. N. Grinyaev, A. N. Razzhuvalov

Результат исследований: Материалы для журналаСтатья

22 Цитирования (Scopus)

Аннотация

Electron tunneling through the GaN/Ga1 - xAlxN(0001) wurtzite strained structures is investigated by the pseudopotential and scattering matrix methods. It is shown that the results of multiband calculations at low aluminum concentrations (x <0.3) are adequately described within the single-valley model in the envelope wave function method accounting for the dependences of the effective mass on the energy and strain. Upon electron tunneling through two-barrier structures, sharp resonance peaks are observed at a barrier thickness of several monolayers and the characteristic collision time in the resonance region is equal to ∼1 ps. The internal electric fields associated with spontaneous and piezoelectric polarizations lead to a "red" or "blue" shift in the resonance energy according to the thickness and location of barriers with respect to the polar axis. In the (GaN)n(Ga1 - xAlxN)m superlattices, the internal fields can form the Stark ladder of electronic states at a small number of ultrathin layers even in the absence of external fields.

Язык оригиналаАнглийский
Страницы (с-по)549-555
Число страниц7
ЖурналPhysics of the Solid State
Том43
Номер выпуска3
DOI
СостояниеОпубликовано - мар 2001
Опубликовано для внешнего пользованияДа

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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