Research on the radiation exposure "memory effects" in AlGaAs heterostructures

A. V. Gradoboev, V. V. Sednev

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

2 Цитирования (Scopus)

Аннотация

Radiation exposure and long running time cause degradation of semiconductors' structures as well as semiconductors based on these structures. Besides, long running time can be the reason of partial radiation defects annealing. The purpose of the research work is to study the "memory effect" that happens during fast neuron radiation in AlGaAs heterostructures. Objects of the research are Infrared Light Emitting Electrodes (IRED) based on doubled AlGaAs heterostructures. During the experimental research LEDs were preliminarily radiated with fast neutrons, and radiation defects were annealed within the condition of current training with high temperatures, then emission power was measured. The research proved the existence of the "memory effect" that results in radiation stability enhancement with subsequent radiation. Possible mechanisms of the "memory effect" occurrence are under review.

Язык оригиналаАнглийский
Название основной публикацииIOP Conference Series: Materials Science and Engineering
ИздательInstitute of Physics Publishing
Том81
Издание1
DOI
СостояниеОпубликовано - 23 апр 2015
СобытиеInternational Scientific Conference on Radiation-Thermal Effects and Processes in Inorganic Materials, RTEP 2014 - Tomsk, Российская Федерация
Продолжительность: 3 ноя 20148 ноя 2014

Другое

ДругоеInternational Scientific Conference on Radiation-Thermal Effects and Processes in Inorganic Materials, RTEP 2014
СтранаРоссийская Федерация
ГородTomsk
Период3.11.148.11.14

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

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  • Цитировать

    Gradoboev, A. V., & Sednev, V. V. (2015). Research on the radiation exposure "memory effects" in AlGaAs heterostructures. В IOP Conference Series: Materials Science and Engineering (1 ред., Том 81). [012007] Institute of Physics Publishing. https://doi.org/10.1088/1757-899X/81/1/012007