Reliability of CoolMOS™ under extremely hard repetitive electrical working conditions

F. Saint-Eve, S. Lefebvre, Z. Khatir

Результат исследований: Материалы для типов конференцийДокумент

3 Цитирования (Scopus)

Аннотация

The paper deals with the behaviour of CoolMOS transistors under extremely hard repetitive working conditions like transient avalanche and short-circuit operations. The repetition of these severe working operations is responsible for the devices ageing and results unavoidably in the components failures. A long term campaign of experimental tests was made in order to determine the number of hard working operations the devices can support before failure for different dissipated energies. Moreover, the CoolMOS behaviour was compared with IGBTs having similar characteristics. The results show the very good ability of these devices to work in extremely hard repetitive working operations.

Язык оригиналаАнглийский
Страницы312-315
Число страниц4
СостояниеОпубликовано - 1 сен 2003
Опубликовано для внешнего пользованияДа
Событие2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs Proceedings - Cambridge, Великобритания
Продолжительность: 14 июл 200317 июл 2003

Конференция

Конференция2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs Proceedings
СтранаВеликобритания
ГородCambridge
Период14.7.0317.7.03

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Цитировать

    Saint-Eve, F., Lefebvre, S., & Khatir, Z. (2003). Reliability of CoolMOS™ under extremely hard repetitive electrical working conditions. 312-315. Документ представлен на 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs Proceedings, Cambridge, Великобритания.