Recombination kinetics in nonlinear defective LiB3O5 crystals

I. N. Ogorodnikov, A. V. Porotnikov, A. V. Kruzhalov, V. Yu Yakovlev

Результат исследований: Материалы для журналаСтатья

11 Цитирования (Scopus)

Аннотация

A study of recombination kinetics in LiB3O5 (LBO) crystals by time-resolved luminescence and absorption spectroscopy is reported. An investigation of the kinetics of transient optical absorption (TOA) and luminescence under ns-scale electron-beam excitation performed within a broad temperature range of 77-500 K and a 1.2-5-eV spectral interval has established that the specific features in the recombination kinetics observed in LBO involve electronic, B2+, and hole, O-, trapping centers. The TOA and luminescence kinetics, as well as their temperature dependence, are interpreted by a model of competing hole centers. Relations connecting the kinetics parameters and the temperature dependence to the parameters of the main LBO point defects are presented.

Язык оригиналаАнглийский
Страницы (с-по)1817-1822
Число страниц6
ЖурналPhysics of the Solid State
Том40
Номер выпуска11
СостояниеОпубликовано - ноя 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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  • Цитировать

    Ogorodnikov, I. N., Porotnikov, A. V., Kruzhalov, A. V., & Yakovlev, V. Y. (1998). Recombination kinetics in nonlinear defective LiB3O5 crystals. Physics of the Solid State, 40(11), 1817-1822.