Raman based stress analysis of the active areas of a piezoresistive MEMS force sensor - Experimental setup, data processing, and comparison to numerically obtained results

P. Meszmer, K. Hiller, R. D. Rodriguez, E. Sheremet, D. R.T. Zahn, M. Hietschold, B. Wunderle

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

1 цитирование (Scopus)

Выдержка

For the development of lifetime models in a physics-of-failure approach for microelectronic devices and functional elements on the submicron or even nanoscopic scale, the exact knowledge of the materials in use and their failure behavior is imperative. A piezoresistive MEMS force sensor, which can be integrated in MEMS sized tensile and fatigue test stages, was developed and is characterized using micro-Raman spectroscopy. This paper describes the experimental approach, the implementation and results of micro-Raman stress measurements in comparison to numerical simulations based on the finite element method.

Язык оригиналаАнглийский
Название основной публикации2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016
ИздательInstitute of Electrical and Electronics Engineers Inc.
ISBN (электронное издание)9781509021062
DOI
СостояниеОпубликовано - 29 апр 2016
Опубликовано для внешнего пользованияДа
Событие17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016 - Montpellier, Франция
Продолжительность: 18 апр 201620 апр 2016

Конференция

Конференция17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016
СтранаФранция
ГородMontpellier
Период18.4.1620.4.16

Отпечаток

Force Sensor
Stress Analysis
Raman
Stress analysis
Micro-electro-mechanical Systems
MEMS
Raman Spectroscopy
Stress measurement
Sensors
Microelectronics
Fatigue
Raman spectroscopy
Lifetime
Physics
Finite Element Method
Fatigue of materials
Finite element method
Numerical Simulation
Computer simulation
Model

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Surfaces, Coatings and Films
  • Modelling and Simulation
  • Safety, Risk, Reliability and Quality
  • Industrial and Manufacturing Engineering

Цитировать

Meszmer, P., Hiller, K., Rodriguez, R. D., Sheremet, E., Zahn, D. R. T., Hietschold, M., & Wunderle, B. (2016). Raman based stress analysis of the active areas of a piezoresistive MEMS force sensor - Experimental setup, data processing, and comparison to numerically obtained results. В 2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016 [7463340] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EuroSimE.2016.7463340

Raman based stress analysis of the active areas of a piezoresistive MEMS force sensor - Experimental setup, data processing, and comparison to numerically obtained results. / Meszmer, P.; Hiller, K.; Rodriguez, R. D.; Sheremet, E.; Zahn, D. R.T.; Hietschold, M.; Wunderle, B.

2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7463340.

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

Meszmer, P, Hiller, K, Rodriguez, RD, Sheremet, E, Zahn, DRT, Hietschold, M & Wunderle, B 2016, Raman based stress analysis of the active areas of a piezoresistive MEMS force sensor - Experimental setup, data processing, and comparison to numerically obtained results. в 2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016., 7463340, Institute of Electrical and Electronics Engineers Inc., 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016, Montpellier, Франция, 18.4.16. https://doi.org/10.1109/EuroSimE.2016.7463340
Meszmer P, Hiller K, Rodriguez RD, Sheremet E, Zahn DRT, Hietschold M и соавт. Raman based stress analysis of the active areas of a piezoresistive MEMS force sensor - Experimental setup, data processing, and comparison to numerically obtained results. В 2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7463340 https://doi.org/10.1109/EuroSimE.2016.7463340
Meszmer, P. ; Hiller, K. ; Rodriguez, R. D. ; Sheremet, E. ; Zahn, D. R.T. ; Hietschold, M. ; Wunderle, B. / Raman based stress analysis of the active areas of a piezoresistive MEMS force sensor - Experimental setup, data processing, and comparison to numerically obtained results. 2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016. Institute of Electrical and Electronics Engineers Inc., 2016.
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AU - Wunderle, B.

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