Raman based stress analysis of the active areas of a piezoresistive MEMS force sensor - Experimental setup, data processing, and comparison to numerically obtained results — National Research Tomsk Polytechnic University

Аннотация

For the development of lifetime models in a physics-of-failure approach for microelectronic devices and functional elements on the submicron or even nanoscopic scale, the exact knowledge of the materials in use and their failure behavior is imperative. A piezoresistive MEMS force sensor, which can be integrated in MEMS sized tensile and fatigue test stages, was developed and is characterized using micro-Raman spectroscopy. This paper describes the experimental approach, the implementation and results of micro-Raman stress measurements in comparison to numerical simulations based on the finite element method.

Язык оригинала	Английский
Название основной публикации	2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016
Издатель	Institute of Electrical and Electronics Engineers Inc.
ISBN (электронное издание)	9781509021062
DOI	https://doi.org/10.1109/EuroSimE.2016.7463340
Состояние	Опубликовано - 29 апр 2016
Опубликовано для внешнего пользования	Да
Событие	17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016 - Montpellier, Франция Продолжительность: 18 апр 2016 → 20 апр 2016

Конференция

Конференция	17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016
Страна	Франция
Город	Montpellier
Период	18.4.16 → 20.4.16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Surfaces, Coatings and Films
Modelling and Simulation
Safety, Risk, Reliability and Quality
Industrial and Manufacturing Engineering

Доступ к документу

10.1109/EuroSimE.2016.7463340

Fingerprint Подробные сведения о темах исследования «Raman based stress analysis of the active areas of a piezoresistive MEMS force sensor - Experimental setup, data processing, and comparison to numerically obtained results». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать

Meszmer, P., Hiller, K., Rodriguez, R. D., Sheremet, E., Zahn, D. R. T., Hietschold, M., & Wunderle, B. (2016). Raman based stress analysis of the active areas of a piezoresistive MEMS force sensor - Experimental setup, data processing, and comparison to numerically obtained results. В 2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016 [7463340] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EuroSimE.2016.7463340

Raman based stress analysis of the active areas of a piezoresistive MEMS force sensor - Experimental setup, data processing, and comparison to numerically obtained results. / Meszmer, P.; Hiller, K.; Rodriguez, R. D.; Sheremet, E.; Zahn, D. R.T.; Hietschold, M.; Wunderle, B.

2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7463340.

Результат исследований: Материалы для книги/типы отчетов › Материалы для конференции

Meszmer, P, Hiller, K, Rodriguez, RD , Sheremet, E, Zahn, DRT, Hietschold, M & Wunderle, B 2016, Raman based stress analysis of the active areas of a piezoresistive MEMS force sensor - Experimental setup, data processing, and comparison to numerically obtained results. в 2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016., 7463340, Institute of Electrical and Electronics Engineers Inc., 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016, Montpellier, Франция, 18.4.16. https://doi.org/10.1109/EuroSimE.2016.7463340

Meszmer P, Hiller K, Rodriguez RD , Sheremet E, Zahn DRT, Hietschold M и соавт. Raman based stress analysis of the active areas of a piezoresistive MEMS force sensor - Experimental setup, data processing, and comparison to numerically obtained results. В 2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7463340 https://doi.org/10.1109/EuroSimE.2016.7463340

Meszmer, P. ; Hiller, K. ; Rodriguez, R. D. ; Sheremet, E. ; Zahn, D. R.T. ; Hietschold, M. ; Wunderle, B. / Raman based stress analysis of the active areas of a piezoresistive MEMS force sensor - Experimental setup, data processing, and comparison to numerically obtained results. 2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016. Institute of Electrical and Electronics Engineers Inc., 2016.

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abstract = "For the development of lifetime models in a physics-of-failure approach for microelectronic devices and functional elements on the submicron or even nanoscopic scale, the exact knowledge of the materials in use and their failure behavior is imperative. A piezoresistive MEMS force sensor, which can be integrated in MEMS sized tensile and fatigue test stages, was developed and is characterized using micro-Raman spectroscopy. This paper describes the experimental approach, the implementation and results of micro-Raman stress measurements in comparison to numerical simulations based on the finite element method.",

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