Radiation-thermal activation of silicon implanted in gallium arsenide

V. M. Ardyshev, A. P. Surzhikov

Результат исследований: Материалы для журналаСтатья


The layer density, density profile, and mobility of electrons in 28Si-ion-doped layers of semiinsulating GaAs after radiation annealing with electron energy above and below the defect formation threshold and after thermal annealing in the temperature range Ta = 590-830°C are investigated. It is shown that for radiation annealing energy above the defect formation threshold ion-doped layers are formed with much lower annealing temperatures, and the degree of electrical activation of silicon in these layers is high and the density of electron mobility limiting defects is low.

Язык оригиналаАнглийский
Страницы (с-по)636-639
Число страниц4
Номер выпуска6
СостояниеОпубликовано - июн 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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