Radiation-thermal activation of silicon implanted in gallium arsenide

V. M. Ardyshev, A. P. Surzhikov

Результат исследований: Материалы для журналаСтатья

Выдержка

The layer density, density profile, and mobility of electrons in 28Si-ion-doped layers of semiinsulating GaAs after radiation annealing with electron energy above and below the defect formation threshold and after thermal annealing in the temperature range Ta = 590-830°C are investigated. It is shown that for radiation annealing energy above the defect formation threshold ion-doped layers are formed with much lower annealing temperatures, and the degree of electrical activation of silicon in these layers is high and the density of electron mobility limiting defects is low.

Язык оригиналаАнглийский
Страницы (с-по)636-639
Число страниц4
ЖурналSemiconductors
Том33
Номер выпуска6
СостояниеОпубликовано - июн 1999

Отпечаток

Gallium arsenide
Heat radiation
thermal radiation
Silicon
gallium
Chemical activation
activation
Annealing
annealing
silicon
Defects
defects
Ions
Radiation
thresholds
Electrons
Electron mobility
radiation
electron mobility
ions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Цитировать

Radiation-thermal activation of silicon implanted in gallium arsenide. / Ardyshev, V. M.; Surzhikov, A. P.

В: Semiconductors, Том 33, № 6, 06.1999, стр. 636-639.

Результат исследований: Материалы для журналаСтатья

@article{6730acc4b5674121bace3648cc1491d3,
title = "Radiation-thermal activation of silicon implanted in gallium arsenide",
abstract = "The layer density, density profile, and mobility of electrons in 28Si-ion-doped layers of semiinsulating GaAs after radiation annealing with electron energy above and below the defect formation threshold and after thermal annealing in the temperature range Ta = 590-830°C are investigated. It is shown that for radiation annealing energy above the defect formation threshold ion-doped layers are formed with much lower annealing temperatures, and the degree of electrical activation of silicon in these layers is high and the density of electron mobility limiting defects is low.",
author = "Ardyshev, {V. M.} and Surzhikov, {A. P.}",
year = "1999",
month = "6",
language = "English",
volume = "33",
pages = "636--639",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "6",

}

TY - JOUR

T1 - Radiation-thermal activation of silicon implanted in gallium arsenide

AU - Ardyshev, V. M.

AU - Surzhikov, A. P.

PY - 1999/6

Y1 - 1999/6

N2 - The layer density, density profile, and mobility of electrons in 28Si-ion-doped layers of semiinsulating GaAs after radiation annealing with electron energy above and below the defect formation threshold and after thermal annealing in the temperature range Ta = 590-830°C are investigated. It is shown that for radiation annealing energy above the defect formation threshold ion-doped layers are formed with much lower annealing temperatures, and the degree of electrical activation of silicon in these layers is high and the density of electron mobility limiting defects is low.

AB - The layer density, density profile, and mobility of electrons in 28Si-ion-doped layers of semiinsulating GaAs after radiation annealing with electron energy above and below the defect formation threshold and after thermal annealing in the temperature range Ta = 590-830°C are investigated. It is shown that for radiation annealing energy above the defect formation threshold ion-doped layers are formed with much lower annealing temperatures, and the degree of electrical activation of silicon in these layers is high and the density of electron mobility limiting defects is low.

UR - http://www.scopus.com/inward/record.url?scp=0033148185&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033148185&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0033148185

VL - 33

SP - 636

EP - 639

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 6

ER -