Выдержка
The layer density, density profile, and mobility of electrons in 28Si-ion-doped layers of semiinsulating GaAs after radiation annealing with electron energy above and below the defect formation threshold and after thermal annealing in the temperature range Ta = 590-830°C are investigated. It is shown that for radiation annealing energy above the defect formation threshold ion-doped layers are formed with much lower annealing temperatures, and the degree of electrical activation of silicon in these layers is high and the density of electron mobility limiting defects is low.
| Язык оригинала | Английский |
|---|---|
| Страницы (с-по) | 636-639 |
| Число страниц | 4 |
| Журнал | Semiconductors |
| Том | 33 |
| Номер выпуска | 6 |
| Состояние | Опубликовано - июн 1999 |
Отпечаток
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Цитировать
Radiation-thermal activation of silicon implanted in gallium arsenide. / Ardyshev, V. M.; Surzhikov, A. P.
В: Semiconductors, Том 33, № 6, 06.1999, стр. 636-639.Результат исследований: Материалы для журнала › Статья
}
TY - JOUR
T1 - Radiation-thermal activation of silicon implanted in gallium arsenide
AU - Ardyshev, V. M.
AU - Surzhikov, A. P.
PY - 1999/6
Y1 - 1999/6
N2 - The layer density, density profile, and mobility of electrons in 28Si-ion-doped layers of semiinsulating GaAs after radiation annealing with electron energy above and below the defect formation threshold and after thermal annealing in the temperature range Ta = 590-830°C are investigated. It is shown that for radiation annealing energy above the defect formation threshold ion-doped layers are formed with much lower annealing temperatures, and the degree of electrical activation of silicon in these layers is high and the density of electron mobility limiting defects is low.
AB - The layer density, density profile, and mobility of electrons in 28Si-ion-doped layers of semiinsulating GaAs after radiation annealing with electron energy above and below the defect formation threshold and after thermal annealing in the temperature range Ta = 590-830°C are investigated. It is shown that for radiation annealing energy above the defect formation threshold ion-doped layers are formed with much lower annealing temperatures, and the degree of electrical activation of silicon in these layers is high and the density of electron mobility limiting defects is low.
UR - http://www.scopus.com/inward/record.url?scp=0033148185&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033148185&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0033148185
VL - 33
SP - 636
EP - 639
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 6
ER -