Аннотация
Dechanneling processes for electrons in a (111) Si crystal based on the solution of Fokker-Planck equation have been studied. The dynamics of particle distribution density has been investigated in dependence on both energy and initial scattering distribution of electron beams. The influence of dechanneling process on spectral intensity of channeling radiation for electrons in a crystal is investigated.
Язык оригинала | Английский |
---|---|
Номер статьи | 012029 |
Журнал | Journal of Physics: Conference Series |
Том | 357 |
Номер выпуска | 1 |
DOI | |
Состояние | Опубликовано - 2012 |
ASJC Scopus subject areas
- Physics and Astronomy(all)