Radiation model of light emitting diode based on algainp heterostructures with multiple quantum wells

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19 Цитирования (Scopus)

Аннотация

Neutron degradation was investigated for AlGaInP light-emitting diodes with wavelengths in the 690 nm region. The process of degradation light output power is shown in three stages. Wattampere, volt-watt and current-voltage characteristic of the light-emitting diodes fabricated on the basis of heterostructures with AlGaInP multiple quantum wells allows to distinguished areas of low, average and strong injection of electrons into the active region of the diodes. Comparison of the research results made of different semiconductor structures suggests that the radiation model of lightemitting diode based on AlGaInP heterostructures with multiple quantum wells is common to all light-emitting diodes under irradiation by fast neutrons, protons, electrons and gamma rays.

Язык оригиналаАнглийский
Название основной публикацииAdvanced Materials Research
Страницы237-241
Число страниц5
Том880
DOI
СостояниеОпубликовано - 2014
Событие10th International Conference on Prospects of Fundamental Sciences Development, PFSD-2013 - Tomsk, Российская Федерация
Продолжительность: 23 апр 201326 апр 2013

Серия публикаций

НазваниеAdvanced Materials Research
Том880
ISSN (печатное издание)10226680

Другое

Другое10th International Conference on Prospects of Fundamental Sciences Development, PFSD-2013
СтранаРоссийская Федерация
ГородTomsk
Период23.4.1326.4.13

ASJC Scopus subject areas

  • Engineering(all)

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