Radiation defect complexes in ion irradiated aluminum nitride

A. V. Kabyshev, F. V. Konusov

Результат исследований: Материалы для журналаСтатья

Выдержка

Using the methods of optical absorption and photoconductivity, the parameters of localized states of radiation-induced defect complexes in ion-irradiated and annealed aluminum nitride have been ascertained. Contributions of defect clusters with a continuous spectra of energetic levels as well as radiation vacancy and impurity-vacancy defects with local energetic levels in the material properties change were determined. Nature of radiation point defects clusters and impurity-vacancy complexes is established.

Язык оригиналаАнглийский
Страницы (с-по)5-12
Число страниц8
ЖурналFizika i Khimiya Obrabotki Materialov
Номер выпуска1
СостояниеОпубликовано - 2004

Отпечаток

Aluminum nitride
Vacancies
Ions
Radiation
Defects
Impurities
Photoconductivity
Point defects
Light absorption
Materials properties
aluminum nitride

ASJC Scopus subject areas

  • Materials Science(all)

Цитировать

Radiation defect complexes in ion irradiated aluminum nitride. / Kabyshev, A. V.; Konusov, F. V.

В: Fizika i Khimiya Obrabotki Materialov, № 1, 2004, стр. 5-12.

Результат исследований: Материалы для журналаСтатья

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