Pulsed ion beam formation of highly doped GaAs layers

Rustem M. Bayazitov, Landish Kh Antonova, Ildus B. Khaibullin, Gennadii E. Remnev

Результат исследований: Материалы для журналаСтатья

5 Цитирования (Scopus)

Выдержка

The formation of heavily doped n-GaAs layers using continuous ion implantation and subsequent treatment by powerful pulsed ion beams has been investigated. Using Auger electron spectroscopy (AES), electrical measurements and computer simulations, correlation between donor distributions and electrical activation was established. It is shown that the n+-GaAs layers (n = 1019-1020 cm-3) are formed in the deep tail of the impurity atom distributions. Thermal stability of formed supersaturated layers was investigated.

Язык оригиналаАнглийский
Страницы (с-по)418-421
Число страниц4
ЖурналNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Том139
Номер выпуска1-4
DOI
СостояниеОпубликовано - 1 янв 1998

Отпечаток

Auger electron spectroscopy
Ion implantation
Ion beams
Thermodynamic stability
Chemical activation
ion beams
Impurities
Atoms
Computer simulation
electrical measurement
Auger spectroscopy
electron spectroscopy
ion implantation
thermal stability
computerized simulation
activation
impurities
atoms
simulation

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

Цитировать

Pulsed ion beam formation of highly doped GaAs layers. / Bayazitov, Rustem M.; Antonova, Landish Kh; Khaibullin, Ildus B.; Remnev, Gennadii E.

В: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Том 139, № 1-4, 01.01.1998, стр. 418-421.

Результат исследований: Материалы для журналаСтатья

Bayazitov, Rustem M. ; Antonova, Landish Kh ; Khaibullin, Ildus B. ; Remnev, Gennadii E. / Pulsed ion beam formation of highly doped GaAs layers. В: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 1998 ; Том 139, № 1-4. стр. 418-421.
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