Properties of WS2 films prepared by magnetron sputtering from a nanostructured target

Y. Irtegov, V. An, P. Vinatier, N. Sochugov, A. Zakharov

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

3 Цитирования (Scopus)

Выдержка

Tungsten disulfide films were prepared by magnetron sputtering from a laboratory and a nanostructured targets. The nanostructured target was produced from WS2 nanolamellar particles prepared by self-propagating high-temperature synthesis in argon. The main phase in the films was 2H-WS2. According to the X-ray analysis, the films sputtered from the laboratory target and from the nanostructured one reveal different planes of film growth orientation.

Язык оригиналаАнглийский
Название основной публикацииAdvanced Materials Research
Страницы197-200
Число страниц4
Том872
DOI
СостояниеОпубликовано - 2014
СобытиеRussian-German Forum on Nanotechnology - Tomsk, Российская Федерация
Продолжительность: 21 мая 201324 мая 2013

Серия публикаций

НазваниеAdvanced Materials Research
Том872
ISSN (печатное издание)10226680

Другое

ДругоеRussian-German Forum on Nanotechnology
СтранаРоссийская Федерация
ГородTomsk
Период21.5.1324.5.13

Отпечаток

Magnetron sputtering
X ray analysis
Film growth
Tungsten
Argon
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Цитировать

Irtegov, Y., An, V., Vinatier, P., Sochugov, N., & Zakharov, A. (2014). Properties of WS2 films prepared by magnetron sputtering from a nanostructured target. В Advanced Materials Research (Том 872, стр. 197-200). (Advanced Materials Research; Том 872). https://doi.org/10.4028/www.scientific.net/AMR.872.197

Properties of WS2 films prepared by magnetron sputtering from a nanostructured target. / Irtegov, Y.; An, V.; Vinatier, P.; Sochugov, N.; Zakharov, A.

Advanced Materials Research. Том 872 2014. стр. 197-200 (Advanced Materials Research; Том 872).

Результат исследований: Материалы для книги/типы отчетовМатериалы для конференции

Irtegov, Y, An, V, Vinatier, P, Sochugov, N & Zakharov, A 2014, Properties of WS2 films prepared by magnetron sputtering from a nanostructured target. в Advanced Materials Research. том. 872, Advanced Materials Research, том. 872, стр. 197-200, Tomsk, Российская Федерация, 21.5.13. https://doi.org/10.4028/www.scientific.net/AMR.872.197
Irtegov Y, An V, Vinatier P, Sochugov N, Zakharov A. Properties of WS2 films prepared by magnetron sputtering from a nanostructured target. В Advanced Materials Research. Том 872. 2014. стр. 197-200. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.872.197
Irtegov, Y. ; An, V. ; Vinatier, P. ; Sochugov, N. ; Zakharov, A. / Properties of WS2 films prepared by magnetron sputtering from a nanostructured target. Advanced Materials Research. Том 872 2014. стр. 197-200 (Advanced Materials Research).
@inproceedings{5e88e3e1df2d47bab23899e6afda6224,
title = "Properties of WS2 films prepared by magnetron sputtering from a nanostructured target",
abstract = "Tungsten disulfide films were prepared by magnetron sputtering from a laboratory and a nanostructured targets. The nanostructured target was produced from WS2 nanolamellar particles prepared by self-propagating high-temperature synthesis in argon. The main phase in the films was 2H-WS2. According to the X-ray analysis, the films sputtered from the laboratory target and from the nanostructured one reveal different planes of film growth orientation.",
keywords = "Magnetron sputtering, Thin films, Tungsten disulfide",
author = "Y. Irtegov and V. An and P. Vinatier and N. Sochugov and A. Zakharov",
year = "2014",
doi = "10.4028/www.scientific.net/AMR.872.197",
language = "English",
isbn = "9783037859667",
volume = "872",
series = "Advanced Materials Research",
pages = "197--200",
booktitle = "Advanced Materials Research",

}

TY - GEN

T1 - Properties of WS2 films prepared by magnetron sputtering from a nanostructured target

AU - Irtegov, Y.

AU - An, V.

AU - Vinatier, P.

AU - Sochugov, N.

AU - Zakharov, A.

PY - 2014

Y1 - 2014

N2 - Tungsten disulfide films were prepared by magnetron sputtering from a laboratory and a nanostructured targets. The nanostructured target was produced from WS2 nanolamellar particles prepared by self-propagating high-temperature synthesis in argon. The main phase in the films was 2H-WS2. According to the X-ray analysis, the films sputtered from the laboratory target and from the nanostructured one reveal different planes of film growth orientation.

AB - Tungsten disulfide films were prepared by magnetron sputtering from a laboratory and a nanostructured targets. The nanostructured target was produced from WS2 nanolamellar particles prepared by self-propagating high-temperature synthesis in argon. The main phase in the films was 2H-WS2. According to the X-ray analysis, the films sputtered from the laboratory target and from the nanostructured one reveal different planes of film growth orientation.

KW - Magnetron sputtering

KW - Thin films

KW - Tungsten disulfide

UR - http://www.scopus.com/inward/record.url?scp=84891899595&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84891899595&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/AMR.872.197

DO - 10.4028/www.scientific.net/AMR.872.197

M3 - Conference contribution

AN - SCOPUS:84891899595

SN - 9783037859667

VL - 872

T3 - Advanced Materials Research

SP - 197

EP - 200

BT - Advanced Materials Research

ER -