Production of ultradispersed crystalline silicon carbide by plasmodynamic synthesis

Результат исследований: Материалы для журналаСтатья

9 Цитирования (Scopus)

Выдержка

The direct plasmodynamic synthesis of β-SiC ultradispersed cubic silicon carbide under the action of supersonic pulse flow of carbon-silicon electric-discharge plasma onto a copper barrier in the argon atmosphere has been realized. A powdered product with a high β-SiC content has been obtained, whose single crystals have a mean size of about 100 nm and natural crystallographic habit close to the ideal one.

Язык оригиналаАнглийский
Страницы (с-по)137-142
Число страниц6
ЖурналJournal of Superhard Materials
Том35
Номер выпуска3
DOI
СостояниеОпубликовано - мая 2013

Отпечаток

Electric discharges
Argon
Silicon
Silicon carbide
Copper
Carbon
Single crystals
Crystalline materials
Plasmas
silicon carbide

ASJC Scopus subject areas

  • Inorganic Chemistry
  • Materials Science(all)

Цитировать

Production of ultradispersed crystalline silicon carbide by plasmodynamic synthesis. / Sivkov, A. A.; Nikitin, Dmitry Sergeevich; Pak, A. Ya; Rakhmatullin, I. A.

В: Journal of Superhard Materials, Том 35, № 3, 05.2013, стр. 137-142.

Результат исследований: Материалы для журналаСтатья

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